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NTTD4401F Datasheet(Arkusz danych) 4 Page - ON Semiconductor

Numer części NTTD4401F
Szczegółowy opis  FETKY Power MOSFET and Schottky Diode
Pobierz  8 Pages
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Producent  ONSEMI [ON Semiconductor]
Strona internetowa  http://www.onsemi.com
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NTTD4401F
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4
TYPICAL ELECTRICAL CHARACTERISTICS
VGS = −1.5 V
VGS = −1.7 V
VGS = −1.9 V
TJ = 55°C
TJ = 25°C
VGS = −10 V
VGS = −4.5 V
VGS = −2.5 V
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
VGS = −2.1 V
TJ = 25°C
TJ = 100°C
TJ = 25°C
TJ = 25°C
VGS = −2.7 V
VGS = −4.5 V
ID = −3.3 A
VGS = −4.5 V
VGS = 0 V
TJ = 125°C
TJ = 25°C
TJ = 100°C
VDS > = −10 V
150
−50
1.6
1.4
−25
0
25
75
1.2
1
0.8
0.6
20
0
1000
100
4
8
12
16
10
1
0.1
0.01
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
125
100
50
TJ, JUNCTION TEMPERATURE (°C)
1
0.12
0.1
1.5
2
2.5
3.5
0.08
0.06
0.04
4.5
4
3
2
0.2
0.15
46
0.1
0.05
0
8
1
5
4
1.5
2
3
2
0
3
0
4
3
6
2
1
0
8
1
2.5
4
210
−ID, DRAIN CURRENT (AMPS)
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)




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