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BU1508AX Arkusz danych(PDF) 4 Page - NXP Semiconductors |
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BU1508AX Arkusz danych(HTML) 4 Page - NXP Semiconductors |
4 / 7 page Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1508AX Fig.7. Typical base-emitter saturation voltage. V BEsat = f (IC); parameter IC/IB Fig.8. Typical collector-emitter saturation voltage. V CEsat = f (IC); parameter IC/IB Fig.9. Typical base-emitter saturation voltage. V BEsat = f (IB); parameter IC Fig.10. Typical collector-emitter saturation voltage. V CEsat = f (IB); parameter IC Fig.11. Typical turn-off losses. T j = 85˚C Eoff = f (I B); parameter IC Fig.12. Typical collector storage and fall time. ts = f (I B); tf = f (IB); parameter IC; Tj = 85˚C 0.1 1 10 IC / A VBESAT / V 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 3 4 5 IC/IB= Tj = 25 C Tj = 125 C 0.1 1 10 IB / A VCESAT / V 10 1 0.1 3A 4.5A 6A IC=2A Tj = 25 C Tj = 125 C 0.1 1 10 IC / A VCESAT / V 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 5 4 3 IC/IB= Tj = 25 C Tj = 125 C 0.1 1 10 IB / A Eoff / uJ 1000 100 10 3.5A IC = 4.5A 0 1 2 3 4 IB / A VBESAT / V 1.2 1.1 1.0 0.9 0.8 0.7 0.6 6A 4.5A 3A 2A IC= Tj = 25 C Tj = 125 C 0.1 1 10 IB / A ts, tf / us 12 11 10 9 8 7 6 5 4 3 2 1 0 IC = 3.5A 4.5A tf ts September 1997 4 Rev 1.100 |
Podobny numer części - BU1508AX |
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Podobny opis - BU1508AX |
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