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BU1508AX Arkusz danych(PDF) 4 Page - NXP Semiconductors

Numer części BU1508AX
Szczegółowy opis  Silicon Diffused Power Transistor
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Producent  PHILIPS [NXP Semiconductors]
Strona internetowa  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BU1508AX Arkusz danych(HTML) 4 Page - NXP Semiconductors

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Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU1508AX
Fig.7. Typical base-emitter saturation voltage.
V
BEsat = f (IC); parameter IC/IB
Fig.8. Typical collector-emitter saturation voltage.
V
CEsat = f (IC); parameter IC/IB
Fig.9. Typical base-emitter saturation voltage.
V
BEsat = f (IB); parameter IC
Fig.10. Typical collector-emitter saturation voltage.
V
CEsat = f (IB); parameter IC
Fig.11. Typical turn-off losses. T
j = 85˚C
Eoff = f (I
B); parameter IC
Fig.12. Typical collector storage and fall time.
ts = f (I
B); tf = f (IB); parameter IC; Tj = 85˚C
0.1
1
10
IC / A
VBESAT / V
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
3
4
5
IC/IB=
Tj = 25 C
Tj = 125 C
0.1
1
10
IB / A
VCESAT / V
10
1
0.1
3A
4.5A
6A
IC=2A
Tj = 25 C
Tj = 125 C
0.1
1
10
IC / A
VCESAT / V
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
5
4
3
IC/IB=
Tj = 25 C
Tj = 125 C
0.1
1
10
IB / A
Eoff / uJ
1000
100
10
3.5A
IC = 4.5A
0
1
2
3
4
IB / A
VBESAT / V
1.2
1.1
1.0
0.9
0.8
0.7
0.6
6A
4.5A
3A
2A
IC=
Tj = 25 C
Tj = 125 C
0.1
1
10
IB / A
ts, tf / us
12
11
10
9
8
7
6
5
4
3
2
1
0
IC =
3.5A
4.5A
tf
ts
September 1997
4
Rev 1.100


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