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BU1706A Arkusz danych(PDF) 2 Page - NXP Semiconductors

Numer części BU1706A
Szczegółowy opis  Silicon Diffused Power Transistor
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Producent  PHILIPS [NXP Semiconductors]
Strona internetowa  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BU1706A Arkusz danych(HTML) 2 Page - NXP Semiconductors

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Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU1706A
STATIC CHARACTERISTICS
T
mb = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CES
Collector cut-off current
1
V
BE = 0 V; VCE = VCESMmax
-
-
1.0
mA
I
CES
V
BE = 0 V; VCE = 1500 V
-
-
20
µA
I
CES
V
BE = 0 V; VCE = VCESMmax;
-
-
2.0
mA
T
j = 125 ˚C
I
EBO
Emitter cut-off current
V
EB = 12 V; IC = 0 A
-
-
1
mA
V
CEOsust
Collector-emitter sustaining voltage
I
B = 0 A; IC = 100 mA;
750
-
-
V
L = 25 mH
V
CEsat
Collector-emitter saturation voltage
I
C = 1.5 A; IB = 0.3 A
-
-
1.0
V
V
BEsat
Base-emitter saturation voltage
I
C = 1.5 A; IB = 0.3 A
-
-
1.3
V
h
FE
DC current gain
I
C = 5 mA; VCE = 10 V
8
-
-
h
FE
I
C = 400 mA; VCE = 3 V
12
18
35
h
FE
I
C = 1.5 A; VCE = 1 V
5
7
-
DYNAMIC CHARACTERISTICS
T
mb = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
Switching times (resistive load)
I
Con = 1.5 A; IBon = -IBoff = 0.3 A
t
on
Turn-on time
1.1
1.5
µs
t
s
Turn-off storage time
5
6.5
µs
t
f
Turn-off fall time
0.75
1.0
µs
Switching times (inductive load)
I
Con = 1.5 A; IBon = 0.3 A; LB = 1 µH;
-V
BB = 5 V
t
s
Turn-off storage time
2.0
3.0
µs
t
f
Turn-off fall time
0.25
0.6
µs
Switching times (inductive load)
I
Con = 1.5 A; IBon = 0.3 A; LB = 1 µH;
-V
BB = 5 V; Tj = 100 ˚C
t
s
Turn-off storage time
2.2
3.3
µs
t
f
Turn-off fall time
0.2
0.7
µs
Fig.1. Test circuit for V
CEOsust.
Fig.2. Oscilloscope display for V
CEOsust.
+ 50v
100-200R
Horizontal
Vertical
Oscilloscope
1R
6V
30-60 Hz
300R
VCE / V
min
VCEOsust
IC / mA
100
200
250
0
1 Measured with half sine-wave voltage (curve tracer).
September 1997
2
Rev 1.000


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