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BU2527AW Arkusz danych(PDF) 1 Page - NXP Semiconductors |
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BU2527AW Arkusz danych(HTML) 1 Page - NXP Semiconductors |
1 / 7 page Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2527AW GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for operation up to 64 kHz. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT V CESM Collector-emitter voltage peak value V BE = 0 V - 1500 V V CEO Collector-emitter voltage (open base) - 800 V I C Collector current (DC) - 12 A I CM Collector current peak value - 30 A P tot Total power dissipation T mb ≤ 25 ˚C - 125 W V CEsat Collector-emitter saturation voltage I C = 6.0 A; IB = 1.2 A - 5.0 V I Csat Collector saturation current 6.0 - A t s Storage time I csat = 6.0 A; IB(end) = 0.55 A 1.7 2.0 µs PINNING - SOT429 PIN CONFIGURATION SYMBOL PIN DESCRIPTION 1 base 2 collector 3 emitter tab collector LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V CESM Collector-emitter voltage peak value V BE = 0 V - 1500 V V CEO Collector-emitter voltage (open base) - 800 V I C Collector current (DC) - 12 A I CM Collector current peak value - 30 A I B Base current (DC) - 8 A I BM Base current peak value - 12 A -I B(AV) Reverse base current average over any 20 ms period - 200 mA -I BM Reverse base current peak value 1 -7 A P tot Total power dissipation T mb ≤ 25 ˚C - 125 W T stg Storage temperature -65 150 ˚C T j Junction temperature - 150 ˚C THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT R th j-mb Junction to mounting base - 1.0 K/W R th j-a Junction to ambient in free air 45 - K/W 2 3 1 b c e 1 Turn-off current. September 1997 1 Rev 1.100 |
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