BU2532AW datasheet(3/6 Pages) PHILIPS

Numer części	BU2532AW

Szczegółowy opis	Silicon Diffused Power Transistor

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Philips Semiconductors

Initial specification

Silicon Diffused Power Transistor

BU2532AW

Fig.1. Switching times waveforms.

Fig.2. Switching times definitions.

Fig.3. Switching times test circuit.

Fig.4. High and low DC current gain. h

FE = f (IC)

V

CE = 1 V

Fig.5. High and low DC current gain. h

FE = f (IC)

V

CE = 5 V

Fig.6. Typical collector-emitter saturation voltage.

V

CEsat = f (IC); parameter IC/IB

IC

IB

VCE

I

IBend

12.2us

5us

3.5us

t

TRANSISTOR

DIODE

Csat

0.01

0.1

1

10

100

1

10

100

hFE

BU2530/2AL

IC / A

VCE = 1 V

Tj = 85 C

Tj = 25 C

ICsat

90 %

10 %

tf

ts

IBend

IC

IB

t

- IBM

0.01

0.1

1

10

100

1

10

100

hFE

BU2530/2AL

IC / A

VCE = 5 V

Tj = 85 C

Tj = 25 C

+ 150 v nominal

adjust for ICsat

Lc

Cfb

T.U.T.

LB

IBend

-VBB

0.1

1

10

100

0.01

0.1

1

10

VCEsat / V

BU2530/2AL

IC / A

IC/IB = 10

IC/IB = 5

Tj = 85 C

Tj = 25 C

September 1997

3

Rev 1.000

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