BU2708DF datasheet(5/7 Pages) PHILIPS

Numer części	BU2708DF

Szczegółowy opis	Silicon Diffused Power Transistor

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Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU2708DF

Fig.11. Normalised power dissipation.

PD% = 100

⋅PD/PD 25˚C = f (T

hs)

Fig.12. Transient thermal impedance.

Z

th j-hs = f(t); parameter D = tp/T

Fig.13. Test Circuit RBSOA. V

CC = 150 V;

-V

BB = 1 - 4 V;

L

C = 1 mH; VCL = 1500 V; LB = 1 - 3 µH;

C

FB = 1 - 4 nF; IB(end) = 0.8 - 4 A

Fig.14. Reverse bias safe operating area. T

j ≤ Tjmax

0

20

40

60

80

100

120

140

Ths / C

PD%

Normalised Power Derating

120

110

100

90

80

70

60

50

40

30

20

10

0

with heatsink compound

LB

IBend

-VBB

LC

T.U.T.

VCC

VCL

CFB

1.0E-06

1E-04

1E-02

1E+00

0.001

0.01

0.1

1

10

0

0.2

0.1

0.05

0.02

0.5

BU2708AF/DF

tp / sec

Zth / K/W

D =

tp

T

P

t

D

100

1000

0

2

4

6

8

10

12

14

16

VCE / V

IC / A

BU2708AF/DF

Area where

Fails occur

1700

September 1997

5

Rev 1.400

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