IRL520NS datasheet(4/10 Pages) IRF

Numer części	IRL520NS

Szczegółowy opis	HEXFET Power MOSFET

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IRL520NS/L

Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

0

200

400

600

800

1

1 0

100

DS

V

, D rain-to-S ourc e V oltage (V )

A

V

= 0V ,

f = 1 M H z

C

= C

+ C

, C

S H O R TE D

C

= C

C

= C

+ C

GS

iss

g s

g d

d s

rs s

g d

o ss

ds

g d

C iss

C oss

Crss

0

3

6

9

12

15

0

5

10

15

20

25

Q

, T ota l G ate C h a rg e (nC )

G

V

= 80 V

V

= 50 V

V

= 20 V

A

F O R TE S T CIR C U IT

S E E F IG U R E 1 3

I

= 6.0 A

D

DS

0.1

1

10

100

0.4

0.6

0.8

1.0

1.2

1.4

T = 25 °C

J

V

= 0 V

GS

V

, Source-to -D rain Voltag e (V )

SD

A

T = 175°C

J

0.1

1

10

100

1

1 0

100

1000

V

, D ra in-to-S o u rce V o lta ge (V )

DS

O P E R A T IO N IN T H IS A R E A L IM ITE D

B Y R DS (on)

10µ s

100µ s

1m s

10 m s

A

T

= 25 °C

T

= 17 5°C

Sing le P u ls e

C

J

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