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BU2730 Arkusz danych(PDF) 1 Page - NXP Semiconductors |
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BU2730 Arkusz danych(HTML) 1 Page - NXP Semiconductors |
1 / 4 page Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor BU2730AL GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT V CESM Collector-emitter voltage peak value V BE = 0 - 1700 V V CEO Collector-emitter voltage (open base) - 825 V I C Collector current (DC) - 16 A I CM Collector current peak value - 40 A P tot Total power dissipation T mb ≤ 25 ˚C - 125 W V CEsat Collector-emitter saturation voltage I C = 9 A; IB = 1.8 A - 5.0 V I Csat Collector saturation current f = 32 kHz 9 - A t s Storage time I Csat = 9 A; f = 32 kHz 3.5 4.5 µs PINNING - SOT430 PIN CONFIGURATION SYMBOL PIN DESCRIPTION 1 base 2 collector 3 emitter heat collector sink LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V CESM Collector-emitter voltage peak value V BE = 0 V - 1700 V V CEO Collector-emitter voltage (open base) - 825 V I C Collector current (DC) - 16 A I CM Collector current peak value - 40 A I B Base current (DC) - 10 A I BM Base current peak value - 15 A -I B(AV) Reverse base current average over any 20 ms period - 200 mA -I BM Reverse base current peak value 1 -10 A P tot Total power dissipation T mb ≤ 25 ˚C - 125 W T stg Storage temperature -55 150 ˚C T j Junction temperature - 150 ˚C THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT R th j-mb Junction to mounting base - - 1.0 K/W R th j-a Junction to ambient in free air 35 - K/W 12 3 b c e 1 Turn-off current. April 1997 1 Rev 1.000 |
Podobny numer części - BU2730 |
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Podobny opis - BU2730 |
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