Zakładka z wyszukiwarką danych komponentów |
|
BU4506 Arkusz danych(PDF) 3 Page - NXP Semiconductors |
|
BU4506 Arkusz danych(HTML) 3 Page - NXP Semiconductors |
3 / 6 page Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4506AF Fig.3. Switching times waveforms (16 kHz). Fig.4. Switching times definitions. Fig.5. Switching times test circuit. Fig.6. High and low DC current gain. Fig.7. High and low DC current gain. Fig.8. Typical collector-emitter saturation voltage. IC IB VCE ICsat IB1 64us 26us 20us t t t TRANSISTOR DIODE IB2 0.01 0.1 1 10 1 10 100 hFE IC / A VCE = 1 V Ths = 25 C Ths = 85 C ICsat 90 % 10 % tf ts IB1 IC IB t t - IB2 0.01 0.1 1 10 1 10 100 VCE = 5 V hFE IC / A Ths = 25 C Ths = 85 C + 150 v nominal adjust for ICsat Lc Cfb T.U.T. LB IBend -VBB 0.1 1 10 0 0.2 0.4 0.6 0.8 1 IC / A VCESAT / V Ths = 25 C Ths = 85 C July 1999 3 Rev 1.000 |
Podobny numer części - BU4506 |
|
Podobny opis - BU4506 |
|
|
Link URL |
Polityka prywatności |
ALLDATASHEET.PL |
Czy Alldatasheet okazała się pomocna? [ DONATE ] |
O Alldatasheet | Reklama | Kontakt | Polityka prywatności | Linki | Lista producentów All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |