Philips Semiconductors

Objective specification

Silicon Diffused Power Transistor

BU4525AL

GENERAL DESCRIPTION

Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack

envelope intended for use in horizontal deflection circuits of colour television receivers an p.c monitors. Features

exceptional tolerance to base drive and collector current load variations resulting in a very low worst case

dissipation.

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

V

CESM

Collector-emitter voltage peak value

V

-

1500

V

V

CEO

Collector-emitter voltage (open base)

-

800

V

I

C

Collector current (DC)

-

12

A

I

CM

Collector current peak value

-

30

A

P

tot

Total power dissipation

T

-

125

W

V

CEsat

Collector-emitter saturation voltage

I

-

3.0

V

I

Csat

Collector saturation current

f= 16 kHz

8.0

-

A

f= 70 kHz

7.5

-

A

t

f

Fall time

I

t.b.f

t.b.f

µs

I

t.b.f

t.b.f

µs

PINNING - SOT430

PIN CONFIGURATION

SYMBOL

PIN

DESCRIPTION

1

base

2

collector

3

emitter

heat

collector

sink

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V

CESM

Collector-emitter voltage peak value

V

-

1500

V

V

CEO

Collector-emitter voltage (open base)

-

800

V

I

C

Collector current (DC)

-

12

A

I

CM

Collector current peak value

-

30

A

I

B

Base current (DC)

-

8

A

I

BM

Base current peak value

-

12

A

-I

BM

Reverse base current peak value

1

-7

A

P

tot

Total power dissipation

T

25 ˚C

-

125

W

T

stg

Storage temperature

-55

150

˚C

T

j

Junction temperature

-

150

˚C

12

3

b

c

e

1 Turn-off current.

January 1998

1

Rev 1.000