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Zakładka z wyszukiwarką danych komponentów |
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IRL1104SPBF Arkusz danych(PDF) 1 Page - International Rectifier |
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IRL1104SPBF Arkusz danych(HTML) 1 Page - International Rectifier |
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1 / 10 page  IRL1104SPbF IRL1104LPbF HEXFET® Power MOSFET PD -95576 l Advanced Process Technology l Surface Mount (IRL1104S) l Low-profile through-hole (IRL1104L) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Parameter Typ. Max. Units RθJC Junction-to-Case ––– 0.9 RθJA Junction-to-Ambient(PCB Mounted,steady-state)** ––– 40 Thermal Resistance °C/W Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
104 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
74 A IDM Pulsed Drain Current
416 PD @TA = 25°C Power Dissipation 2.4 W PD @TC = 25°C Power Dissipation 167 W Linear Derating Factor 1.1 W/°C VGS Gate-to-Source Voltage ±16 V EAS Single Pulse Avalanche Energy
340 mJ IAR Avalanche Current 62 A EAR Repetitive Avalanche Energy 17 mJ dv/dt Peak Diode Recovery dv/dt
5.0 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C Absolute Maximum Ratings Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highestpowercapabilityandthelowestpossibleon-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRL1104L) is available for low- profile applications. Description VDSS = 40V RDS(on) = 0.008Ω ID = 104A 2 D Pak TO-262 S D G 07/19/04 l Logic-Level Gate Drive www.irf.com 1 |
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