BCP56-16 datasheet(4/9 Pages) STMICROELECTRONICS

Numer części	BCP56-16

Szczegółowy opis	Low power NPN Transistor

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Electrical characteristics

BCP56-16

4/9

2

Electrical characteristics

(Tcase = 25°C unless otherwise specified)

Note (2) Pulsed duration = 300

µs, duty cycle ≤1.5%

Table 3.

Electrical characteristics

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICBO

Collector cut-off current

(IE =0)

VCB = 30V

VCB = 30V;

Tj = 125°C

100

10

nA

µA

V(BR)CEO (2)

Collector-emitter

breakdown voltage

(IB =0)

IC = 20mA

80

V

V(BR)CBO

Collector-base

breakdown voltage

(IE =0)

IC = 100µA

100

V

V(BR)EBO

Emitter-base breakdown

voltage (IC =0)

IE = 10µA

5V

VCE(sat) (2)

Collector-emitter

saturation voltage

IC = 500mA

IB = 50mA

0.5

V

VBE(on) (2) Base-emitter on voltage

IC = 500mA

VCE = 2V

1V

hFE (2)

DC current gain

IC = 5mA

VCE = 2V

IC = 150mA

VCE = 2V

IC = 500mA

VCE = 2V

40

100

25

250

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