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2N4123 Arkusz danych(PDF) 1 Page - ON Semiconductor

Numer części 2N4123
Szczegółowy opis  General Purpose Transistors NPN Silicon
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Strona internetowa  http://www.onsemi.com
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© Semiconductor Components Industries, LLC, 2007
March, 2007 − Rev. 3
1
Publication Order Number:
2N4123/D
2N4123, 2N4124
General Purpose
Transistors
NPN Silicon
Features
Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
2N4123
2N4124
VCEO
30
25
Vdc
Collector−Base Voltage
2N4123
2N4124
VCBO
40
30
Vdc
Emitter−Base Voltage
VEBO
5.0
Vdc
Collector Current − Continuous
IC
200
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25
°C
PD
625
5.0
mW
mW/
°C
Total Device Dissipation @ TC = 25°C
Derate above 25
°C
PD
1.5
12
W
mW/
°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
−55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient
RqJA
200
°C/W
Thermal Resistance, Junction−to−Case
RqJC
83.3
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
http://onsemi.com
COLLECTOR
3
2
BASE
1
EMITTER
x = 3 or 4
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
MARKING DIAGRAM
MPS
412x
AYWW
G
G
2N4124G
TO−92
(Pb−Free)
5000 Units / Bulk
Device
Package
Shipping
2N4123RLRM
TO−92
2000 / Tape & Ammo
ORDERING INFORMATION
1 2
3
1
2
BENT LEAD
TAPE & REEL
AMMO PACK
STRAIGHT LEAD
BULK PACK
3
TO−92
CASE 29
STYLE 1
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.


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