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2N4123 Arkusz danych(PDF) 2 Page - ON Semiconductor |
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2N4123 Arkusz danych(HTML) 2 Page - ON Semiconductor |
2 / 6 page 2N4123, 2N4124 http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage (Note 1) (IC = 1.0 mAdc, IE = 0) 2N4123 2N4124 V(BR)CEO 30 25 − − Vdc Collector−Base Breakdown Voltage (IC = 10 mAdc, IE = 0) 2N4123 2N4124 V(BR)CBO 40 30 − − Vdc Emitter−Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 5.0 − Vdc Collector Cutoff Current (VCB = 20 Vdc, IE = 0) ICBO − 50 nAdc Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) IEBO − 50 nAdc ON CHARACTERISTICS DC Current Gain (Note 1) (IC = 2.0 mAdc, VCE = 1.0 Vdc) 2N4123 2N4124 (IC = 50 mAdc, VCE = 1.0 Vdc) 2N4123 2N4124 hFE 50 120 25 60 150 360 − − − Collector−Emitter Saturation Voltage (Note 1) (IC = 50 mAdc, IB = 5.0 mAdc) VCE(sat) − 0.3 Vdc Base−Emitter Saturation Voltage (Note 1) (IC = 50 mAdc, IB = 5.0 mAdc) VBE(sat) − 0.95 Vdc SMALL−SIGNAL CHARACTERISTICS Current−Gain − Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) 2N4123 2N4124 fT 250 300 − − MHz Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo − 8.0 pF Collector−Base Capacitance (IE = 0, VCB = 5.0 V, f = 1.0 MHz) Ccb − 4.0 pF Small−Signal Current Gain (IC = 2.0 mAdc, VCE = 10 Vdc, RS = 10 k W, f = 1.0 kHz) 2N4123 2N4124 hfe 50 120 200 480 − Current Gain − High Frequency (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) 2N4123 2N4124 (IC = 2.0 mAdc, VCE = 10 V, f = 1.0 kHz) 2N4123 (IC = 2.0 mAdc, VCE = 10 V, f = 1.0 kHz) 2N4124 |hfe| 2.5 3.0 50 120 − − 200 480 − Noise Figure (IC = 100 mAdc, VCE = 5.0 Vdc, RS = 1.0 k W, f = 1.0 kHz) 2N4123 2N4124 NF − − 6.0 5.0 dB 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%. |
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