2N4921_06 datasheet(1/6 Pages) ONSEMI

Numer części	2N4921

Szczegółowy opis	Medium?뭁ower Plastic NPN Silicon Transistors

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Producent	ONSEMI [ON Semiconductor]

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January, 2006 − Rev. 11

1

Publication Order Number:

2N4921/D

2N4921, 2N4922, 2N4923

2N4923 is a Preferred Device

Medium−Power Plastic

NPN Silicon Transistors

These high−performance plastic devices are designed for driver

circuits, switching, and amplifier applications.

Features

• Low Saturation Voltage − VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A

• Excellent Power Dissipation Due to Thermopad Construction −

PD = 30 W @ TC = 25_C

• Excellent Safe Operating Area

• Gain Specified to IC = 1.0 A

• Complement to PNP 2N4918, 2N4919, 2N4920

• Pb−Free Packages are Available*

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector−Emitter Voltage

2N4921

2N4922

2N4923

VCEO

40

60

80

Vdc

Collector−Emitter Voltage

2N4921

2N4922

2N4923

VCB

40

60

80

Vdc

Emitter Base Voltage

VEB

5.0

Vdc

Collector Current − Continuous (Note 1)

IC

1.0

3.0

Adc

Base Current

− Continuous

IB

1.0

Adc

Total Power Dissipation @ TC = 25_C

Derate above 25

_C

PD

30

0.24

W

mW/

_C

Operating and Storage Junction

Temperature Range

TJ, Tstg

–65 to +150

_C

THERMAL CHARACTERISTICS (Note 2)

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction−to−Case

qJC

4.16

_C/W

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. The 1.0 A maximum IC value is based upon JEDEC current gain requirements.

The 3.0 A maximum value is based upon actual current handling capability of

the device (see Figures 5 and 6).

2. Recommend use of thermal compound for lowest thermal resistance.

*Indicates JEDEC Registered Data.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

1.0 AMPERE

GENERAL PURPOSE

POWER TRANSISTORS

40−80 VOLTS, 30 WATTS

http://onsemi.com

TO−225

CASE 77

STYLE 1

2 1

3

MARKING DIAGRAM

YWW

2

N492xG

Y

= Year

WW

= Work Week

2N492x = Device Code

x = 1, 2, or 3

G

= Pb−Free Package

1

Preferred devices are recommended choices for future use

and best overall value.

Device

Package

Shipping

ORDERING INFORMATION

2N4921

TO−225

500 Units / Box

2N4921G

TO−225

(Pb−Free)

500 Units / Box

2N4922

TO−225

500 Units / Box

2N4922G

TO−225

(Pb−Free)

500 Units / Box

2N4923

TO−225

500 Units / Box

2N4923G

TO−225

(Pb−Free)

500 Units / Box

Podobny numer części - 2N4921_06

Producent	Numer części	Arkusz danych	Szczegółowy opis
ON Semiconductor	2N4921G	150Kb / 6P	Medium-Power Plastic NPN Silicon Transistors December, 2013 ??Rev. 14
	2N4921G	198Kb / 6P	Medium-Power Plastic NPN Silicon Transistors January, 2017 ??Rev. 15
	2N4921G	150Kb / 6P	Medium-Power Plastic NPN Silicon Transistors December, 2013 ??Rev. 14
	2N4921G	198Kb / 6P	Medium-Power Plastic NPN Silicon Transistors January, 2017 ??Rev. 15
Quanzhou Jinmei Electro...	2N4921	47Kb / 3P	Silicon NPN Power Transistors

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Podobny opis - 2N4921_06

Producent	Numer części	Arkusz danych	Szczegółowy opis
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	MJE340	73Kb / 4P	Plastic Medium?뭁ower NPN Silicon Transistor February, 2006 ??Rev. 11
	MJE371	66Kb / 3P	Plastic Medium?뭁ower PNP Silicon Transistor February, 2006 ??Rev. 6
	BD676	59Kb / 4P	Plastic Medium?뭁ower Silicon PNP Darlingtons October, 2005 ??Rev. 12
	2N4921G	198Kb / 6P	Medium-Power Plastic NPN Silicon Transistors January, 2017 ??Rev. 15
	2N4921G	150Kb / 6P	Medium-Power Plastic NPN Silicon Transistors December, 2013 ??Rev. 14

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