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BDW93CFP Arkusz danych(PDF) 2 Page - STMicroelectronics |
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BDW93CFP Arkusz danych(HTML) 2 Page - STMicroelectronics |
2 / 4 page THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 3.8 oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICBO Collector Cut-off Current (IE = 0) VCB = 100 V VCB = 100 V Tcase = 150 o C 100 5 µA mA ICEO Collector Cut-off Current (IB = 0) VCE = 80 V 1 mA IEBO Emitter Cut-off Current (IC = 0) VEB = 5 V 2mA VCEO(sus) ∗ Collector-Emitter Sustaining Voltage (IB = 0) IC = 100 mA 100 V VCE(sat) ∗ Collector-Emitter Saturation Voltage IC = 5 A IB = 20 mA IC = 10 A IB = 100 mA 2 3 V V VBE(sat) ∗ Base-Emitter Saturation Voltage IC = 5 A IB = 20 mA IC = 10 A IB = 100 mA 2.5 4 V V hFE ∗ DC Current Gain IC = 3 A VCE = 3 V IC = 5 A VCE = 3 V IC = 10 A VCE = 3 V 1000 750 100 20000 VF* Parallel-diode Forward Voltage IF = 5 A IF = 10 A 1.3 1.8 2 4 V V hfe Small Signal Current Gain IC = 1 A VCE = 10 V f = 1 MHz 20 ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % For PNP types voltage and current values are negative. Safe Operating Area BDW93CFP / BDW94CFP 2/4 |
Podobny numer części - BDW93CFP_01 |
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Podobny opis - BDW93CFP_01 |
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