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STB60NH02L Arkusz danych(PDF) 3 Page - STMicroelectronics

Numer części STB60NH02L
Szczegółowy opis  N-CHANNEL 24V - 0.0085 ohm - 60A D2PAK STripFET TM III POWER MOSFET
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Producent  STMICROELECTRONICS [STMicroelectronics]
Strona internetowa  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB60NH02L Arkusz danych(HTML) 3 Page - STMicroelectronics

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STB60NH02L
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(1) Garanted when external Rg=4.7
Ω and tf < tfmax.
(4) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(2) Pulse width limited by safe operating area
(5) Qoss = Coss*
∆ Vin , Coss = Cgd + Cds . See Appendix A
(3) Starting Tj = 25 oC, ID = 25A, VDD = 15V
.
.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 10 V
ID = 30 A
RG =4.7
Ω
VGS = 10 V
(Resistive Load, Figure 3)
10
130
ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD= 10 V ID= 60 A VGS= 10 V
24
5
3.4
32
nC
nC
nC
Qoss(5)
Output Charge
VDS= 16 V
VGS= 0 V
9.4
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(off)
tf
Turn-off Delay Time
Fall Time
VDD = 10 V
ID = 30 A
RG =4.7
Ω,
VGS = 10 V
(Resistive Load, Figure 3)
27
16
21.6
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
ISDM
Source-drain Current
Source-drain Current (pulsed)
60
240
A
A
VSD (4)
Forward On Voltage
ISD = 30 A
VGS = 0
1.3
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 60 A
di/dt = 100A/µs
VDD = 18 V
Tj = 150°C
(see test circuit, Figure 5)
36
36
2
48
48
ns
nC
A
ELECTRICAL CHARACTERISTICS (continued)
Safe Operating Area
Thermal Impedance


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