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Zakładka z wyszukiwarką danych komponentów |
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Zakładka z wyszukiwarką danych komponentów |
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IRFS4321PBF Arkusz danych(PDF) 1 Page - International Rectifier |
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IRFS4321PBF Arkusz danych(HTML) 1 Page - International Rectifier |
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1 / 10 page  6/23/06 PD - 97105 www.irf.com 1 HEXFET® Power MOSFET Benefits l Low RDSON Reduces Losses l Low Gate Charge Improves the Switching Performance l Improved Diode Recovery Improves Switching & EMI Performance l 30V Gate Voltage Rating Improves Robustness l Fully Characterized Avalanche SOA Applications l Motion Control Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l Hard Switched and High Frequency Circuits S D G GD S Gate Drain Source D2Pak IRFS4321PbF TO-262 IRFSL4321PbF S D G D S D G D IRFS4321PbF IRFSL4321PbF VDSS 150V RDS(on) typ. 12m : max. 15m : ID 83A c * RθJC (end of life) for D2Pak and TO-262 = 0.65°C/W. This is the maximum measured value after 1000 temperature cycles from -55 to 150°C and is accounted for by the physical wearout of the die attach medium. Notes through
are on page 2 Absolute Maximum Ratings Symbol Parameter Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V IDM Pulsed Drain Current d PD @TC = 25°C Maximum Power Dissipation W Linear Derating Factor W/°C VGS Gate-to-Source Voltage V EAS (Thermally limited) Single Pulse Avalanche Energy e mJ TJ Operating Junction and °C TSTG Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Thermal Resistance Parameter Typ. Max. Units RθJC Junction-to-Case g ––– 0.45* °C/W RθJA Junction-to-Ambient g ––– 40 330 Max. 83 c 59 330 -55 to + 175 2.2 300 ±30 120 |
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