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IRF511 Arkusz danych(PDF) 3 Page - Harris Corporation |
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IRF511 Arkusz danych(HTML) 3 Page - Harris Corporation |
3 / 7 page 5-3 IRF510, IRF511, IRF512, IRF513 Input Capacitance CISS VGS = 0V, VDS = 25V, f = 1.0MHz, (Figure 11) - 135 - pF Output Capacitance COSS -80 - pF Reverse-Transfer Capacitance CRSS -20 - pF Internal Drain Inductance LD Measured From the Contact Screw On Tab To Center of Die Modified MOSFET Symbol Showing the Internal Devices Inductances - 3.5 - nH Measured From the Drain Lead, 6mm (0.25in) From Package to Center of Die - 4.5 - nH Internal Source Inductance LS Measured From The Source Lead, 6mm (0.25in) From Header to Source Bonding Pad - 7.5 - nH Thermal Resistance Junction to Case RθJC - - 3.5 oC/W Thermal Resistance Junction to Ambient RθJA Free air operation - - 80 oC/W Source to Drain Diode Specifications PARAMETER SYMBOL Test Conditions MIN TYP MAX UNITS Continuous Source to Drain Current ISD Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Diode - - 5.6 A Pulse Source to Drain Current (Note 3) ISDM - - 20 A Source to Drain Diode Voltage (Note 2) VSD TJ = 25 oC, I SD = 5.6A, VGS = 0V (Figure 13) - - 2.5 V Reverse Recovery Time trr TJ = 25 oC, I SD = 5.6A, dISD/dt = 100A/µs 4.6 96 200 ns Reverse Recovered Charge QRR TJ = 25 oC, I SD = 5.6A, dISD/dt = 100A/µs 0.17 0.4 0.83 µC NOTES: 2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%. 3. Repetitive rating: pulse width limited by max junction temperature. See Transient Thermal Impedance curve (Figure 3). 4. VDD = 25V, start TJ = 25 oC, L = 910µH, RG = 25Ω, peak IAS = 5.6A (See Figure 15, 16). Electrical Specifications TC = 25 oC, Unless Otherwise Specified (Continued) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS LD LS D S G D S G |
Podobny numer części - IRF511 |
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Podobny opis - IRF511 |
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