5-3

IRF510, IRF511, IRF512, IRF513

Input Capacitance

-

135

-

pF

Output Capacitance

-80

-

pF

Reverse-Transfer Capacitance

-20

-

pF

Internal Drain Inductance

Measured From the

Contact Screw On Tab

To Center of Die

Modified MOSFET

Symbol Showing the

Internal Devices

Inductances

-

3.5

-

nH

Measured From the

Drain Lead, 6mm

(0.25in) From Package

to Center of Die

-

4.5

-

nH

Internal Source Inductance

Measured From The

Source Lead, 6mm

(0.25in) From Header to

Source Bonding Pad

-

7.5

-

nH

Thermal Resistance Junction to Case

-

-

3.5

Thermal Resistance Junction to Ambient

Free air operation

-

-

80

Source to Drain Diode Specifications

PARAMETER

SYMBOL

Test Conditions

MIN

TYP

MAX

UNITS

Continuous Source to Drain Current

Modified MOSFET

Symbol Showing the

Integral Reverse

P-N Junction Diode

-

-

5.6

A

Pulse Source to Drain Current

(Note 3)

-

-

20

A

Source to Drain Diode Voltage (Note 2)

-

-

2.5

V

Reverse Recovery Time

4.6

96

200

ns

Reverse Recovered Charge

0.17

0.4

0.83

µC

NOTES:

2. Pulse test: pulse width

≤ 300µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by max junction temperature. See Transient Thermal Impedance curve (Figure 3).

Electrical Specifications

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

D

S

G

D

S

G