© Semiconductor Components Industries, LLC, 2005

June, 2005− Rev. 6

1

Publication Order Number:

BAS16WT1/D

BAS16WT1

Preferred Device

Silicon Switching Diode

Features

Rating

Symbol

Value

Unit

Continuous Reverse Voltage

75

V

Recurrent Peak Forward Current

200

mA

Peak Forward Surge Current

Pulse Width = 10

ms

500

mA

Total Power Dissipation,

Derate above 25

°C

Mounted on a Ceramic Substrate

(10 x 8 x 0.6 mm)

200

1.6

mW

mW/

°C

Operating and Storage Junction

Temperature Range

− 55 to

+150

°C

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits

are exceeded, device functional operation is not implied, damage may occur

and reliability may be affected.

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance,

Junction−to−Ambient

One Diode Loaded

Mounted on a Ceramic Substrate

(10 x 8 x 0.6 mm)

625

°C/W

http://onsemi.com

Preferred devices are recommended choices for future use

and best overall value.

Device

Package

ORDERING INFORMATION

BAS16WT1

SC−70

3000 / Tape & Reel

SC−70

CASE 419

STYLE 2

MARKING

DIAGRAM

A6

= Specific Device Code

D

= Date Code

A6D

BAS16WT1G

SC−70

(Pb−Free)

3000 / Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

3

CATHODE

1

ANODE

1

2

3