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BC337 Arkusz danych(PDF) 1 Page - ON Semiconductor |
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BC337 Arkusz danych(HTML) 1 Page - ON Semiconductor |
1 / 5 page © Semiconductor Components Industries, LLC, 2005 September, 2005 − Rev. 5 1 Publication Order Number: BC337/D BC337, BC337−16, BC337−25, BC337−40, BC338−25 Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Symbol BC337 BC338 Unit Collector − Emitter Voltage VCEO 45 25 Vdc Collector − Base Voltage VCBO 50 30 Vdc Emitter − Base Voltage VEBO 5.0 Vdc Collector Current − Continuous IC 800 mAdc Total Device Dissipation @ TA = 25°C Derate above 25 °C PD 625 5.0 mW mW/ °C Total Device Dissipation @ TC = 25°C Derate above 25 °C PD 1.5 12 W mW/ °C Operating and Storage Junction Temperature Range TJ, Tstg −55 to +150 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. ORDERING INFORMATION COLLECTOR 1 2 BASE 3 EMITTER MARKING DIAGRAM BC33 x−xx AYWW G G BC33x−xx = Device Code (Refer to page 4) A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) 3 2 1 TO−92 CASE 29 STYLE 17 |
Podobny numer części - BC337_05 |
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Podobny opis - BC337_05 |
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