MJ11021G datasheet(4/5 Pages) ONSEMI

Numer części	MJ11021G

Szczegółowy opis	Complementary Darlington Silicon Power Transistors

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MJ11021(PNP)

MJ11022 (NPN)

http://onsemi.com

4

COLLECTOR CURRENT (AMPS)

4.0

0.1

3.0

2.5

1.5

3.5

2.0

1.0

0.5

0.7 1.0

2.0 3.0 5.0

10

7.0

50

30

20

70

4.0

3.0

2.5

1.5

3.5

2.0

1.0

0.5

IC, COLLECTOR CURRENT (A)

Figure 6. DC Current Gain

Figure 7. Collector Saturation Region

IB, BASE CURRENT (mA)

7000

5000

10,000

0.3

0.5

1.0

20

0.2

3000

2000

1000

700

500

300

200

0.7

COLLECTOR CURRENT (AMPS)

Figure 8. “On” Voltages

VBE(sat) @ IC/IB = 100

VCE = 5.0 Vdc

100

3.0

5.0

10

7.0

15

2.0

20,000

10,000

30,000

2000

1000

700

500

300

TJ = 25°C

TJ = 150°C

TJ = − 55°C

7000

5000

3000

4.0

0.5

IB, BASE CURRENT (mA)

500

3.0

2.5

1.5

3.5

2.0

1.0

0.5

300

200

0.7 1.0

2.0 3.0 5.0

10

7.0

50

30

20

100

70

IC = 5.0 A

TJ = 25°C

IC = 15 A

0.2 0.3 0.5

TJ = 25°C

VBE @ VCE = 5.0 V

VCE(sat) @ IC/IB = 100

PNP

NPN

PNP

NPN

PNP

NPN

0.3

0.5

1.0

20

0.2

0.7

3.0

5.0

10

7.0

15

2.0

VCE = 5.0 Vdc

TJ = 150°C

TJ = 25°C

TJ = − 55°C

IC = 10 A

4.0

0.5

500

3.0

2.5

1.5

3.5

2.0

1.0

0.5

300

200

0.7 1.0

2.0 3.0 5.0

10

7.0

50

30

20

100

70

TJ = 25°C

IC = 5.0 A

IC = 15 A

IC = 10 A

0.1

0.7 1.0

2.0 3.0 5.0

10

7.0

50

30

20

0.2 0.3 0.5

TJ = 25°C

VBE(sat) @ IC/IB = 100

VBE @ VCE = 5.0 V

VCE(sat) @ IC/IB = 100

Podobny numer części - MJ11021G

Producent	Numer części	Arkusz danych	Szczegółowy opis
ON Semiconductor	MJ11021G	132Kb / 5P	Complementary Darlington Silicon Power Transistors September, 2008 ??Rev. 3

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