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Zakładka z wyszukiwarką danych komponentów |
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Zakładka z wyszukiwarką danych komponentów |
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MMBT4401 Arkusz danych(PDF) 4 Page - Unisonic Technologies |
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MMBT4401 Arkusz danych(HTML) 4 Page - Unisonic Technologies |
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4 / 6 page  MMBT4401 NPN SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 4 of 6 www.unisonic.com.tw QW-R206-035,B TYPICAL CHARACTERISTICS 0.1 1 10 100 300 200 0 Collector Current, IC (mA) Typical Pulsed Current Gain vs Collector Current 0.1 100 0.3 100 110 500 Collector-Emitter Saturation Voltage vs Collector Current 0.2 0.3 3 30 300 400 500 VCE =5V 125℃ 25℃ -40℃ 0.4 Collector Current, IC (mA) 125℃ 25℃ -40℃ β =10 0.4 0.8 100 110 500 Base-Emitter Saturation Voltage vs Collector Current 0.6 1 Collector Current, IC (mA) 125℃ 25℃ -40℃ β =10 0.4 0.8 10 0.1 1 25 Base-Emitter On Voltage vs Collector Current 0.6 1 Collector Current, IC(mA) 125℃ 25℃ -40℃ VCE =5V 0.2 Ambient Temperature, TA(℃) Collector-Cutoff Current vs Ambient Temperature 500 0.1 75 25 50 100 125 150 100 1 10 VCB=40V 0.1 1 10 100 12 4 Reverse Bias Voltage(V) Emitter Transition and Output Capacitance vs Reverse Bias Voltage 8 16 20 f=1MHz Cte Cob |
Podobny numer części - MMBT4401 |
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Podobny opis - MMBT4401 |
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