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MMT05B230T3 Arkusz danych(PDF) 2 Page - ON Semiconductor

Numer części MMT05B230T3
Szczegółowy opis  Thyristor Surge Protectors High Voltage Bidirectional TSPD
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Producent  ONSEMI [ON Semiconductor]
Strona internetowa  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MMT05B230T3 Arkusz danych(HTML) 2 Page - ON Semiconductor

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MMT05B230T3, MMT05B260T3, MMT05B310T3
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2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Operating Temperature Range Blocking or Conducting State
TJ1
−40 to + 125
°C
Overload Junction Temperature − Maximum Conducting State Only
TJ2
+ 175
°C
Instantaneous Peak Power Dissipation (Ipk = 50 A, 10x1000 msec @ 25°C)
PPK
2000
W
Maximum Lead Temperature for Soldering Purposes 1/8
″ from Case for 10 Seconds
TL
260
°C
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Devices are bidirectional. All electrical parameters apply to
forward and reverse polarities.
Characteristics
Symbol
Min
Typ
Max
Unit
Breakover Voltage (Both polarities)
(dv/dt = 100 V/
ms, ISC = 1.0 A, Vdc = 1000 V)
MMT05B230T3
MMT05B260T3
MMT05B310T3
(+65
°C)
MMT05B230T3
MMT05B260T3
MMT05B310T3
V(BO)
265
320
365
280
340
400
V
Breakover Voltage (Both polarities)
(f = 60 Hz, ISC = 1.0 A(rms), VOC = 1000 V(rms),
MMT05B230T3
RI = 1.0 kW, t = 0.5 cycle) (Note 3)
MMT05B260T3
MMT05B310T3
(+65
°C)
MMT05B230T3
MMT05B260T3
MMT05B310T3
V(BO)
265
320
365
280
340
400
V
Breakover Voltage Temperature Coefficient
dV(BO)/dTJ
0.08
%/
°C
Breakdown Voltage (I(BR) = 1.0 mA) Both polarities
MMT05B230T3
MMT05B260T3
MMT05B310T3
V(BR)
190
240
280
V
Off State Current (VD1 = 50 V) Both polarities
Off State Current (VD2 = VDM) Both polarities
ID1
ID2
2.0
5.0
mA
On−State Voltage (IT = 1.0 A)
(PW
≤ 300 ms, Duty Cycle ≤ 2%) (Note 3)
VT
1.53
3.0
V
Breakover Current (f = 60 Hz, VDM = 1000 V(rms), RS = 1.0 kW) − Both polarities
IBO
230
mA
Holding Current (Both polarities) (Note 3)
VS = 500 V; IT (Initiating Current) = "1.0 A
IH
150
340
mA
Critical Rate of Rise of Off−State Voltage
(Linear waveform, VD = Rated VBR, TJ = 25°C)
dv/dt
2000
V/
ms
Capacitance (f = 1.0 MHz, 50 Vdc, 1.0 V rms Signal)
Capacitance (f = 1.0 MHz, 2.0 Vdc, 15 mV rms Signal)
CO
22
53
75
pF
3. Measured under pulse conditions to reduce heating.


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