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BYD12D Arkusz danych(PDF) 3 Page - NXP Semiconductors |
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BYD12D Arkusz danych(HTML) 3 Page - NXP Semiconductors |
3 / 8 page 1998 Dec 03 3 Philips Semiconductors Preliminary specification Controlled avalanche rectifiers BYD12 series ELECTRICAL CHARACTERISTICS Tj =25 °C unless otherwise specified. THERMAL CHARACTERISTICS Note 1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper layer ≥40 µm, pitch 5 mm; see Fig.6. SYMBOL PARAMETER CONDITIONS MAX. UNIT VF forward voltage IF = 1 A; see Fig.4 1.05 V IR reverse current VR =VRRMmax 1 µA VR =VRRMmax; Tj = 165 °C; see Fig.5 100 µA SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 150 K/W |
Podobny numer części - BYD12D |
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Podobny opis - BYD12D |
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