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BYG90-40 Arkusz danych(PDF) 4 Page - NXP Semiconductors |
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BYG90-40 Arkusz danych(HTML) 4 Page - NXP Semiconductors |
4 / 7 page 1996 May 06 4 Philips Semiconductors Product specification Schottky barrier rectifier diodes BYG90-40 series ELECTRICAL CHARACTERISTICS Tamb =25 °C; unless otherwise specified. Note 1. Pulsed test: tp = 300 µs; δ = 0.02. THERMAL CHARACTERISTICS Note 1. Refer to SOD106A standard mounting conditions. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Per diode VF forward voltage see Fig.2; note 1 IF =1A −− 550 mV IF =3A −− 850 mV IF = 1 A; Tj = 100 °C −− 450 mV IR reverse current VR =VRRMmax; note 1; see Fig.3 −− 1 mA VR =VRRMmax; Tj = 100 °C; note 1; see Fig.3 −− 10 mA Cd diode capacitance VR = 4 V; f = 1 MHz; see Fig.4 −− 75 pF SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 80 K/W |
Podobny numer części - BYG90-40 |
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Podobny opis - BYG90-40 |
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