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AD9632AN Arkusz danych(PDF) 3 Page - Analog Devices

Numer części AD9632AN
Szczegółowy opis  Ultralow Distortion, Wide Bandwidth Voltage Feedback Op Amps
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Producent  AD [Analog Devices]
Strona internetowa  http://www.analog.com
Logo AD - Analog Devices

AD9632AN Arkusz danych(HTML) 3 Page - Analog Devices

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REV. C
AD9631/AD9632
–3–
ABSOLUTE MAXIMUM RATINGS
1
Supply Voltage (+VS to –VS) . . . . . . . . . . . . . . . . . . . . . 12.6 V
Voltage Swing
¥ Bandwidth Product . . . . . . . . . . . 550 V-MHz
Internal Power Dissipation
2
Plastic Package (N) . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.3 W
Small Outline Package (R) . . . . . . . . . . . . . . . . . . . . . . 0.9 W
Input Voltage (Common Mode) . . . . . . . . . . . . . . . . . . . .
±VS
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . .
±1.2 V
Output Short Circuit Duration
. . . . . . . . . . . . . . . . . . . . . . .Observe Power Derating Curves
Storage Temperature Range N, R . . . . . . . . . –65 C to +125 C
Operating Temperature Range (A Grade) . . . . –40 C to +85 C
Lead Temperature Range (Soldering 10 sec) . . . . . . . . . 300 C
NOTES
1 Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
2 Specification is for device in free air:
8-Lead PDIP Package:
qJA = 90∞C/W
8-Lead SOIC Package:
qJA = 140∞C/W
METALLIZATION PHOTO
Dimensions shown in inches and (millimeters)
Connect Substrate to –VS
AD9631
AD9632
–IN
2
+VS
7
6
OUT
–IN
2
+VS
7
6
OUT
3
+IN
4
–VS
3
+IN
4
–VS
0.046
(1.17)
0.046
(1.17)
0.050 (1.27)
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated by these
devices is limited by the associated rise in junction temperature.
The maximum safe junction temperature for plastic encapsulated
devices is determined by the glass transition temperature of the
plastic, approximately 150 C. Exceeding this limit temporarily
may cause a shift in parametric performance due to a change in
the stresses exerted on the die by the package. Exceeding a junc-
tion temperature of 175 C for an extended period can result in
device failure.
While the AD9631 and AD9632 are internally short circuit
protected, this may not be sufficient to guarantee that the maxi-
mum junction temperature (150 C) is not exceeded under all
conditions. To ensure proper operation, it is necessary to observe
the maximum power derating curves.
AMBIENT TEMPERATURE – C
2.0
1.5
0
–50
1.0
0.5
–40 –30 –20 –10
0
10
20
30
40 50
60 70
80 90
8-LEAD PDIP PACKAGE
8-LEAD SOIC PACKAGE
TJ = +150 C
Figure 2. Maximum Power Dissipation
vs. Temperature
ORDERING GUIDE
Temperature
Package
Package
Model
Range
Description Option
AD9631AN
–40
∞C to +85∞C PDIP
N-8
AD9631AR
–40
∞C to +85∞C SOIC
R-8
AD9631AR-REEL
–40
∞C to +85∞C SOIC
R-8
AD9631AR-REEL7 –40
∞C to +85∞C SOIC
R-8
AD9631CHIPS
Die
AD9632AN
–40
∞C to +85∞C PDIP
N-8
AD9632AR
–40
∞C to +85∞C SOIC
R-8
AD9632AR-REEL
–40
∞C to +85∞C SOIC
R-8
AD9632AR-REEL7 –40
∞C to +85∞C SOIC
R-8
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although the
AD9631/AD9632 features proprietary ESD protection circuitry, permanent damage may occur on
devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are
recommended to avoid performance degradation or loss of functionality.


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