TIP112G datasheet(3/8 Pages) ONSEMI

Numer części	TIP112G

Szczegółowy opis	Plastic Medium-Power Complementary Silicon Transistors

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Producent	ONSEMI [ON Semiconductor]

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TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP)

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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (Note 1)

(IC = 30 mAdc, IB = 0)

TIP110, TIP115

TIP111, TIP116

TIP112, TIP117

VCEO(sus)

60

80

100

−

Vdc

Collector Cutoff Current

(VCE = 30 Vdc, IB = 0)

TIP110, TIP115

(VCE = 40 Vdc, IB = 0)

TIP111, TIP116

(VCE = 50 Vdc, IB = 0)

TIP112 ,TIP117

ICEO

−

2.0

mAdc

Collector Cutoff Current

(VCB = 60 Vdc, IE = 0)

TIP110, TIP115

(VCB = 80 Vdc, IE = 0)

TIP111, TIP116

(VCB = 100 Vdc, IE = 0)

TIP112, TIP117

ICBO

−

1.0

mAdc

Emitter Cutoff Current

(VBE = 5.0 Vdc, IC = 0)

IEBO

−

2.0

mAdc

ON CHARACTERISTICS (Note 1)

DC Current Gain

(IC = 1.0 Adc, VCE = 4.0 Vdc)

(IC = 2.0 Adc, VCE = 4.0 Vdc)

hFE

1000

500

−

Collector−Emitter Saturation Voltage

(IC = 2.0 Adc, IB = 8.0 mAdc)

VCE(sat)

−

2.5

Vdc

Base−Emitter On Voltage

(IC = 2.0 Adc, VCE = 4.0 Vdc)

VBE(on)

−

2.8

Vdc

DYNAMIC CHARACTERISTICS

Small−Signal Current Gain

(IC = 0.75 Adc, VCE = 10 Vdc, f = 1.0 MHz)

hfe

25

−

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)

TIP115, TIP116, TIP117

TIP110, TIP111, TIP112

Cob

−

200

100

pF

1. Pulse Test: Pulse Width

v 300 ms, Duty Cycle v 2%.

0

20

40

60

80

100

120

160

Figure 1. Power Derating

T, TEMPERATURE (

°C)

40

20

60

140

TC

0

2.0

1.0

3.0

TA

TC

Podobny numer części - TIP112G

Producent	Numer części	Arkusz danych	Szczegółowy opis
ON Semiconductor	TIP112G	148Kb / 8P	Plastic Medium-Power Complementary Silicon Transistors November, 2014 ??Rev. 8
Unisonic Technologies	TIP112G-T60-K	189Kb / 4P	NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR
	TIP112G-T60-K	189Kb / 4P	NPN EPITAXIAL SILICON TRANSISTOR
	TIP112G-TA3-T	189Kb / 4P	NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR
	TIP112G-TA3-T	189Kb / 4P	NPN EPITAXIAL SILICON TRANSISTOR

More results

Podobny opis - TIP112G

Producent	Numer części	Arkusz danych	Szczegółowy opis
Boca Semiconductor Corp...	TIP110	153Kb / 3P	PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS
ON Semiconductor	2N6040	152Kb / 6P	Plastic Medium-Power Complementary Silicon Transistors November, 2014 ??Rev. 10
ON Semiconductor	TIP120	144Kb / 7P	Plastic Medium-Power Complementary Silicon Transistors November, 2014 ??Rev. 9
Motorola, Inc	BDX53B	169Kb / 6P	Plastic Medium-Power Complementary Silicon Transistors
New Jersey Semi-Conduct...	MJE2100	144Kb / 3P	PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS
ON Semiconductor	TIP110	148Kb / 8P	Plastic Medium-Power Complementary Silicon Transistors November, 2014 ??Rev. 8
	BDX53B	115Kb / 7P	Plastic Medium-Power Complementary Silicon Transistors November, 2014 ??Rev. 15
	2N6040	114Kb / 8P	Plastic Medium-Power Complementary Silicon Transistors April, 2002 ??Rev. 4
	BDX53B	87Kb / 7P	Plastic Medium-Power Complementary Silicon Transistors February, 2006 ??Rev. 12
New Jersey Semi-Conduct...	MJE1090	143Kb / 3P	PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS
ON Semiconductor	TIP120	91Kb / 7P	Plastic Medium-Power Complementary Silicon Transistors September, 2005 ??Rev. 6

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TIP112G Arkusz danych(PDF) 3 Page - ON Semiconductor

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