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BZX79-A2V4 Arkusz danych(PDF) 5 Page - NXP Semiconductors |
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BZX79-A2V4 Arkusz danych(HTML) 5 Page - NXP Semiconductors |
5 / 12 page This text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here in _white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here inThis text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader. white to force landscape pages to be ... Table 2 Per type, BZX79-B/C27 to BZX79-B/C75 Tj =25 °C unless otherwise specified. BZX79- Bxxx Cxxx WORKING VOLTAGE VZ (V) at IZtest =2mA DIFFERENTIAL RESISTANCE rdif (Ω) TEMP. COEFF. SZ (mV/K) at IZtest =2mA (see Figs 5 and 6) DIODE CAP. Cd (pF) at f = 1 MHz; VR =0V NON-REPETITIVE PEAK REVERSE CURRENT IZSM (A) at tp = 100 µs; Tamb =25 °C Tol. ±2% (B) Tol. approx. ±5% (C) at IZtest = 0.5 mA at IZtest =2mA MIN. MAX. MIN. MAX. TYP. MAX. TYP. MAX. MIN. TYP. MAX. MAX. MAX. 27 26.50 27.50 25.1 28.9 65 300 25 80 18.0 22.7 25.3 50 1.0 30 29.40 30.60 28.0 32.0 70 300 30 80 20.6 25.7 29.4 50 1.0 33 32.30 33.70 31.0 35.0 75 325 35 80 23.3 28.7 33.4 45 0.9 36 35.30 36.70 34.0 38.0 80 350 35 90 26.0 31.8 37.4 45 0.8 39 38.20 39.80 37.0 41.0 80 350 40 130 28.7 34.8 41.2 45 0.7 43 42.10 43.90 40.0 46.0 85 375 45 150 31.4 38.8 46.6 40 0.6 47 46.10 47.90 44.0 50.0 85 375 50 170 35.0 42.9 51.8 40 0.5 51 50.00 52.00 48.0 54.0 90 400 60 180 38.6 46.9 57.2 40 0.4 56 54.90 57.10 52.0 60.0 100 425 70 200 42.2 52.0 63.8 40 0.3 62 60.80 63.20 58.0 66.0 120 450 80 215 58.8 64.4 71.6 35 0.3 68 66.60 69.40 64.0 72.0 150 475 90 240 65.6 71.7 79.8 35 0.25 75 73.50 76.50 70.0 79.0 170 500 95 255 73.4 80.2 88.6 35 0.2 |
Podobny numer części - BZX79-A2V4 |
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Podobny opis - BZX79-A2V4 |
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