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BZX55-18 Arkusz danych(PDF) 5 Page - NXP Semiconductors |
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BZX55-18 Arkusz danych(HTML) 5 Page - NXP Semiconductors |
5 / 7 page 1996 Apr 26 5 Philips Semiconductors Product specification Voltage regulator diodes BZX55 series THERMAL CHARACTERISTICS Note 1. Device mounted on a printed circuit-board without metallization pad. SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point lead length 8 mm 300 K/W Rth j-a thermal resistance from junction to ambient lead length max.; see Fig.2 and note 1 380 K/W GRAPHICAL DATA Fig.2 Thermal resistance from junction to ambient as a function of pulse duration. handbook, full pagewidth 10−1 110 102 103 104 105 MBG930 102 10 1 103 tp (ms) tp tp T T δ = 0.02 0.01 ≤0.001 0.75 0.50 0.33 0.20 0.10 0.05 δ = 1 Rth j-a (K/W) |
Podobny numer części - BZX55-18 |
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Podobny opis - BZX55-18 |
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