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FFP08S60S Arkusz danych(PDF) 1 Page - Fairchild Semiconductor |
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FFP08S60S Arkusz danych(HTML) 1 Page - Fairchild Semiconductor |
1 / 5 page tm ©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com April 2007 FFP08S60S Rev. A FFP08S60S Stealth 2 Rectifier Features • High Speed Switching ( Max. trr<30ns @ IF=8A ) • High Reverse Voltage and High Reliability • Avalanche Energy Rated Applications • General Purpose • Switching Mode Power Supply • Boost Diode in continuous mode power factor corrections • Power switching circuits 8A, 600V Stealth2 Rectifier The FFP08S60S is stealth 2 rectifier with soft recovery charac- teristics (trr<30ns). They has half the recovery time of hyperfast rectifier and are silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as freewheeling of boost diode in switching power supplies and other power swithching applica- tions. Their low stored charge and hyperfast soft recovery mini- mize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. Pin Assignments Absolute Maximum Ratings Thermal Characteristics Package Marking and Ordering 1. Cathode 2. Anode TO-220-2L 1 1. Cathode 2. Anode 2 Symbol Parameter Value Units VRRM Peak Repetitive Reverse Voltage 600 V VRWM Working Peak Reverse Voltage 600 V VR DC Blocking Voltage 600 V IF(AV) Average Rectified Forward Current @ TC = 115 °C8 A IFSM Non-repetitive Peak Surge Current 60Hz Single Half-Sine Wave 80 A TJ, TSTG Operating Junction and Storage Temperature - 65 to +150 °C Symbol Parameter Max Units RθJC Maximum Thermal Resistance, Junction to Case 2.5 °C/W Device Marking Device Package Reel Size Tape Width Quantity F08S60S FFP08S60STU TO-220-2L - - 50 TC = 25°C unless otherwise noted TC = 25°C unless otherwise noted Information |
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