SFW9510 datasheet(1/7 Pages) FAIRCHILD

Numer części	SFW9510

Szczegółowy opis	Advanced Power MOSFET

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SFW/I9510

BV

DSS = -100 V

R

DS(on) = 1.2

I

D = -3.6 A

-100

-3.6

-2.5

-14

±30

52

-3.6

3.2

-6.5

3.8

32

0.21

- 55 to +175

300

4.69

40

62.5

--

Ω

n Avalanche Rugged Technology

n Rugged Gate Oxide Technology

n Lower Input Capacitance

n Improved Gate Charge

n Extended Safe Operating Area

n 175

o

C Operating Temperature

n Lower Leakage Current : 10 µA(Max.) @ V

DS = -100V

n Low R

DS(ON) : 0.912 Ω (Typ.)

Advanced Power MOSFET

Thermal Resistance

Junction-to-Case

Junction-to-Ambient

RθJC

RθJA

o

C/W

Characteristic

Max.

Units

Symbol

Typ.

FEATURES

D2-PAK

1. Gate 2. Drain 3. Source

1

3

2

1

2

3

I2-PAK

*

* When mounted on the minimum pad size recommended (PCB Mount).

Absolute Maximum Ratings

Drain-to-Source Voltage

Continuous Drain Current (T

C=25

o

C)

Continuous Drain Current (T

C=100

o

C)

Drain Current-Pulsed

Gate-to-Source Voltage

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Total Power Dissipation (T

A=25

o

C)

Total Power Dissipation (T

C=25

o

C)

Linear Derating Factor

Operating Junction and

Storage Temperature Range

Maximum Lead Temp. for Soldering

Purposes, 1/8” from case for 5-seconds

Characteristic

Value

Units

Symbol

I

DM

V

GS

E

AS

I

AR

E

AR

dv/dt

P

D

I

D

T

J , TSTG

T

L

A

V

mJ

A

mJ

V/ns

W

W/

o

C

A

o

C

V

DSS

V

*

O

1

O

2

O

3

O

1

O

1

Rev. C

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