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4N35 Arkusz danych(PDF) 2 Page - Texas Instruments |
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4N35 Arkusz danych(HTML) 2 Page - Texas Instruments |
2 / 9 page 4N35, 4N36, 4N37 OPTOCOUPLERS SOES021C – NOVEMBER 1981 – REVISED APRIL 1998 2 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 electrical characteristics at 25 °C free-air temperature (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT V(BR)CBO Collector-base breakdown voltage IC = 100 µA, IE = 0, IF = 0 70† V V(BR)CEO Collector-emitter breakdown voltage IC = 10 mA, IB = 0, IF = 0 30† V V(BR)EBO Emitter-base breakdown voltage IE = 100 µA, IC = 0, IF = 0 7† V IR Input diode static reverse current VR = 6 V 10† µA IIO Input-to-output current VIO = rated peak value, t = 8 ms 100 mA VCE = 10 V, IF = 10 mA, IB = 0 10† IC(on) On-state collector current VCE = 10 V, TA = – 55°C IF = 10 mA, IB = 0, 4† mA () VCE = 10 V, TA = 100°C IF = 10 mA, IB = 0, 4† VCE = 10 V, IF = 0 IB = 0 1 50 nA IC(off) Off-state collector current VCE = 30 V, TA = 100°C IF = 0, IB = 0, 500† µA hFE Transistor static forward current transfer ratio VCE = 5 V, IC = 10 mA, IF = 0 500 IF = 10 mA 0.8† 1.5† VF Input diode static forward voltage IF = 10 mA, TA = – 55°C 0.9† 1.7† V IF = 10 mA, TA = 100°C 0.7† 1.4† VCE(sat) Collector-emitter saturation voltage IC = 0.5 mA, IF = 10 mA, IB = 0 mA 0.3† V rIO Input-to-output internal resistance VIO = 500 V, See Note 6 1011† Ω Cio Input-to-output capacitance VIO = 0, f = 1 MHz, See Note 6 1 2.5† pF † JEDEC registered data NOTE 6: These parameters are measured between both input-diode leads shorted together and all the phototransistor leads shorted together. switching characteristics at 25 °C free-air temperature† PARAMETER TEST CONDITIONS MIN TYP MAX UNIT ton Time-on time VCC = 10 V, IC(on) = 2 mA, 7 10 µs toff Turn-off time CC RL = 100 Ω, C(on) See Figure 1 7 10 µs † JEDEC registered data |
Podobny numer części - 4N35_05 |
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Podobny opis - 4N35_05 |
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