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AM29LV256ML113FI Arkusz danych(PDF) 3 Page - Advanced Micro Devices |
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AM29LV256ML113FI Arkusz danych(HTML) 3 Page - Advanced Micro Devices |
3 / 69 page This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. Publication# 25263 Rev: C Amendment/+6 Issue Date: December 16, 2005 Refer to AMD’s Website (www.amd.com) for the latest information. Am29LV256M 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBit TM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O TM Control DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES Single power supply operation — 3 volt read, erase, and program operations VersatileI/O TM control — Device generates data output voltages and tolerates data input voltages on the CE# and DQ inputs/outputs as determined by the voltage on the VIO pin; operates from 1.65 to 3.6 V Manufactured on 0.23 µm MirrorBit process technology SecSi TM (Secured Silicon) Sector region — 128-word/256-byte sector for permanent, secure identification through an 8-word/16-byte random Electronic Serial Number, accessible through a command sequence — May be programmed and locked at the factory or by the customer Flexible sector architecture — Five hundred twelve 32 Kword (64 Kbyte) sectors Compatibility with JEDEC standards — Provides pinout and software compatibility for single-power supply flash, and superior inadvertent write protection Minimum 100,000 erase cycle guarantee per sector 20-year data retention at 125°C PERFORMANCE CHARACTERISTICS High performance — 100 ns access time — 30 ns page read times — 0.5 s typical sector erase time — 15 µs typical effective write buffer word programming time: 16-word/32-byte write buffer reduces overall programming time for multiple-word updates — 4-word/8-byte page read buffer — 16-word/32-byte write buffer Low power consumption (typical values at 3.0 V, 5 MHz) — 13 mA typical active read current — 50 mA typical erase/program current — 1 µA typical standby mode current Package options — 56-pin TSOP — 64-ball Fortified BGA SOFTWARE & HARDWARE FEATURES Software features — Program Suspend & Resume: read other sectors before programming operation is completed — Erase Suspend & Resume: read/program other sectors before an erase operation is completed — Data# polling & toggle bits provide status — Unlock Bypass Program command reduces overall multiple-word or byte programming time — CFI (Common Flash Interface) compliant: allows host system to identify and accommodate multiple flash devices Hardware features — Sector Group Protection: hardware-level method of preventing write operations within a sector group — Temporary Sector Group Unprotect: VID-level method of changing code in locked sector groups — WP#/ACC input accelerates programming time (when high voltage is applied) for greater throughput during system production. Protects first or last sector regardless of sector protection settings — Hardware reset input (RESET#) resets device — Ready/Busy# output (RY/BY#) detects program or erase cycle completion This product has been retired and is not available for designs. For new and current designs, S29GL256N supersedes Am29LV256M and is the factory-recommended migration path. Please refer to the S29GL256N datasheet for specifications and ordering information. Availability of this document is retained for reference and his- torical purposes only. |
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