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BCP52 Arkusz danych(PDF) 1 Page - Fairchild Semiconductor |
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BCP52 Arkusz danych(HTML) 1 Page - Fairchild Semiconductor |
1 / 8 page 3 1997 Fairchild Semiconductor Corporation PNP General Purpose Amplifier Absolute Maximum Ratings* TA = 25°C unless otherwise noted *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics TA = 25°C unless otherwise noted BCP52 This device is designed for general purpose medium power amplifiers and switching circuits requiring collector currents to 1.0 A. Sourced from Process 78. B C C SOT-223 E Symbol Parameter Value Units VCEO Collector-Emitter Voltage 60 V VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 1.2 A TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C Symbol Characteristic Max Units BCP52 PD Total Device Dissipation Derate above 25 °C 1.5 12 W mW/ °C RθJA Thermal Resistance, Junction to Ambient 83.3 °C/W NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3) All voltages (V) and currents (A) are negative polarity for PNP transistors. |
Podobny numer części - BCP52_00 |
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Podobny opis - BCP52_00 |
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