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BDW94C Arkusz danych(PDF) 2 Page - Fairchild Semiconductor

Numer części BDW94C
Szczegółowy opis  PNP Epitaxial Silicon Transistor
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Producent  FAIRCHILD [Fairchild Semiconductor]
Strona internetowa  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

BDW94C Arkusz danych(HTML) 2 Page - Fairchild Semiconductor

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BDW94/C Rev. B
Electrical Characteristics T
C = 25°C unless otherwise noted
* Pulse Test: PW = 300
µs, Duty Cycle = 1.5% Pulsed
Symbol
Parameter
Conditions
Min.
Typ.
Max
Units
VCEO(sus)
Collector-Emitter Sustaining Voltage
: BDW94
: BDW94C
IC = -100mA, IB = 0
-45
-100
V
V
ICBO
Collector Cut-off Current
: BDW94
: BDW94C
VCB = -45V, IE = 0
VCB = -100V, IE = 0
-100
-100
µA
µA
ICEO
Collector Cut-off Current
: BDW94
: BDW94C
VEB = -45V, IB = 0
VCE = -100V, IB = 0
-1
-1
mA
mA
IEBO
Emitter Cut-off Current
VEB = -5V, IC = 0
-2
mA
hFE
DC Current Gain *
VCE = -3V, IC = -3A
VCE = -3V, IC = -5A
VCE = -3V, IC = -10A
1000
750
100
20000
VCE(sat)
Collector-Emitter Saturation Voltage *
IC = -5A, IB = -20mA
IC = -10A, IB = -100mA
-2
-3
V
V
VBE(sat)
Base-Emitter Saturation Voltage *
IC = -5A, IB = -20mA
IC = -10A, IB = -100mA
-2.5
-4
V
V
VF
Parallel Diode Forward Voltage *
IF = -5A
IF = -10A
-1.3
-1.8
-2
-4
V
V


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