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NE5517 Arkusz danych(PDF) 6 Page - NXP Semiconductors

Numer części NE5517
Szczegółowy opis  Dual operational transconductance amplifier
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Producent  PHILIPS [NXP Semiconductors]
Strona internetowa  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

NE5517 Arkusz danych(HTML) 6 Page - NXP Semiconductors

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Philips Semiconductor
Product data
NE5517/NE5517A/
AU5517
Dual operational transconductance amplifier
2002 Dec 06
6
TYPICAL PERFORMANCE CHARACTERISTICS
VOUT
VCMR
VOUT
10
10
10
10
1
0.1
µA1µA10µA
100
µA
1000
µA
AMPLIFIER BIAS CURRENT (IABC)
VS = ±15V
+125
°C
4
3
2
+25
°C
-55
°C
Peak Output Current
10
10
10
10
10
4
3
2
5
-50
°C -25°C0°C25°C50°C75°C100°C125°C
Leakage Current
0V
(+)VIN = (–)VIN = VOUT = 36V
AMBIENT TEMPERATURE (TA)
10
10
10
10
10
4
3
2
0.1
µA1µA10µA
100
µA
1000
µA
AMPLIFIER BIAS CURRENT (IABC)
VS = ±15V
+125
°C
+25
°C
-55
°C
Transconductance
5
gM
mq
m
M
PINS 2, 15
OPEN
10
10
1
0.1
0.01
1
2
0.1
µA1µA10µA
100
µA
1000
µA
AMPLIFIER BIAS CURRENT (IABC)
Input Resistance
PINS 2, 15
OPEN
10
10
10
10
1
3
2
4
INPUT DIFFERENTIAL VOLTAGE
+125
°C
+25
°C
Input Leakage
0
1
23
45
6
7
10
10
10
10
1
3
4
0.1
µA1µA10µA
100
µA
1000
µA
AMPLIFIER BIAS CURRENT (IABC)
Input Bias Current
VS = ±15V
+125
°C
+25
°C
-55
°C
2
10
10
10
1
0.1
2
3
0.1
µA1µA10µA
100
µA
1000
µA
AMPLIFIER BIAS CURRENT (IABC)
Input Bias Current
VS = ±15V
+125
°C
+25
°C
-55
°C
5
0.1
µA1µA10µA
100
µA
1000
µA
AMPLIFIER BIAS CURRENT (IABC)
Input Offset Voltage
VS = ±15V
+125
°C
+25
°C
-55
°C
+125
°C
4
3
2
1
0
-1
-2
-3
-4
-5
-6
-7
-8
5
4
3
2
1
0
-1
-2
-3
-4
-5
-6
-7
-8
0.1
µA1µA10µA
100
µA
1000
µA
AMPLIFIER BIAS CURRENT (IABC)
Peak Output Voltage and
Common-Mode Range
VS = ±15V
Tamb = 25°C
VCMR
RLOAD =
SL00309
Figure 4. Typical Performance Characteristics


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