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ISL22449WFV14Z Arkusz danych(PDF) 4 Page - Intersil Corporation

Numer części ISL22449WFV14Z
Szczegółowy opis  Quad Digitally Controlled Potentiometer
Download  12 Pages
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Producent  INTERSIL [Intersil Corporation]
Strona internetowa  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation

ISL22449WFV14Z Arkusz danych(HTML) 4 Page - Intersil Corporation

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4
FN6333.2
September 15, 2006
Operating Specifications Over the recommended operating conditions unless otherwise specified.
SYMBOL
PARAMETER
TEST CONDITIONS
MIN
TYP
(NOTE 5)
MAX
UNIT
ICC1
VCC Supply Current (volatile
write/read)
VCC = +3.6V, 10k DCP, fSPI = 5MHz; (for SPI
active, read and write states)
2.5
mA
VCC Supply Current (volatile
write/read)
VCC = +3.6V, 50k DCP, fSPI = 5MHz; (for SPI
active, read and write states)
0.65
mA
ICC2
VCC Supply Current ( non-volatile
write/read)
VCC = +5.5V, 10k DCP, fSPI = 5MHz; (for SPI
active, read and write states)
4.0
mA
VCC Supply Current ( non-volatile
write/read)
VCC = +5.5V, 50k DCP, fSPI = 5MHz; (for SPI
active, read and write states)
3.0
mA
ISB
VCC Current (standby)
VCC = +5.5V, 10k DCP, SPI interface in
standby state
2.4
mA
VCC = +5.5V, 50k DCP, SPI interface in
standby state
525
µA
VCC = +3.6V, 10k DCP, SPI interface in
standby state
1.6
mA
VCC = +3.6V, 50k DCP, SPI interface in
standby state
350
µA
ISD
VCC Current (shutdown)
VCC = +5.5V @ +85°C, SPI interface in
standby state
5µA
VCC = +5.5V@ +125°C, SPI interface in
standby state
6.5
µA
VCC = +3.6V @ +85°C, SPI interface in
standby state
4µA
VCC = +3.6V @ +125°C, SPI interface in
standby state
5.5
µA
ILkgDig
Leakage current, at pins SHDN, SCK,
SDI, SDO and CS
Voltage at pin from GND to VCC
-1
1
µA
tWRT
(Note 15)
DCP wiper response time
SCK falling edge of last bit of DCP data byte
to wiper new position
1.5
µs
tShdnRec
(Note 15)
DCP recall time from shutdown mode
From rising edge of SHDN signal to wiper
stored position and RH connection
1.5
µs
SCK rising edge of last bit of ACR data byte
to wiper stored position and RH connection
1.5
µs
Vpor
Power-on recall voltage
Minimum VCC at which memory recall occurs
2.0
2.6
V
VccRamp
Vcc ramp rate
0.2
V/ms
tD
Power-up delay
VCC above Vpor, to DCP Initial Value
Register recall completed, and SPI Interface
in standby state
3ms
EEPROM SPECIFICATION
EEPROM Endurance
1,000,000
Cycles
EEPROM Retention
Temperature
T < +55°C
50
Years
tWC
(Note 13)
Non-volatile Write cycle time
12
20
ms
SERIAL INTERFACE SPECIFICATIONS
VIL
SHDN, SCK, SDI, and CS input buffer
LOW voltage
-0.3
0.3*VCC
V
VIH
SHDN, SCK, SDI, and CS input buffer
HIGH voltage
0.7*VCC
VCC+0.3
V
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