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FDC602P Arkusz danych(PDF) 2 Page - Fairchild Semiconductor

Numer części FDC602P
Szczegółowy opis  P-Channel 2.5V PowerTrench Specified MOSFET
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Producent  FAIRCHILD [Fairchild Semiconductor]
Strona internetowa  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDC602P Arkusz danych(HTML) 2 Page - Fairchild Semiconductor

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FDC602P Rev C(W)
Electrical Characteristics
T
A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
VGS = 0 V, ID = –250
µA
–20
V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = –250
µA, Referenced to 25°C
–14
mV/
°C
IDSS
Zero Gate Voltage Drain Current
VDS = –16 V, VGS = 0 V
–1
µA
IGSSF
Gate–Body Leakage, Forward
VGS = 12 V,
VDS = 0 V
100
nA
IGSSR
Gate–Body Leakage, Reverse
VGS = –12 V,
VDS = 0 V
–100
nA
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = –250
µA
–0.6
–0.9
–1.5
V
∆VGS(th)
∆TJ
Gate Threshold Voltage
Temperature Coefficient
ID = –250
µA, Referenced to 25°C
3
mV/
°C
RDS(on)
Static Drain–Source
On–Resistance
VGS = –4.5 V,
ID = –5.5 A
VGS = –2.5 V,
ID = –4.5 A
VGS = –4.5 V, ID = –5.5ATJ=125
°C
27
38
38
35
50
53
m
ID(on)
On–State Drain Current
VGS = –4.5 V,
VDS = –5 V
–20
A
gFS
Forward Transconductance
VDS = –5 V,
ID = –5.5 A
19
S
Dynamic Characteristics
Ciss
Input Capacitance
1456
pF
Coss
Output Capacitance
300
pF
Crss
Reverse Transfer Capacitance
VDS = –10 V,
V GS = 0 V,
f = 1.0 MHz
150
pF
Switching Characteristics
(Note 2)
td(on)
Turn–On Delay Time
15
27
ns
tr
Turn–On Rise Time
11
20
ns
td(off)
Turn–Off Delay Time
57
91
ns
tf
Turn–Off Fall Time
VDD = –10 V,
ID = –1 A,
VGS = –4.5 V,
RGEN = 6
37
59
ns
Qg
Total Gate Charge
14
20
nC
Qgs
Gate–Source Charge
3
nC
Qgd
Gate–Drain Charge
VDS = –10 V,
ID = –5.5 A,
VGS = –4.5 V
5
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
–1.3
A
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V, IS = –1.3 A
(Note 2)
–0.7
–1.2
V
Notes:
1. RθJAis the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain
pins. RθJCis guaranteed by design while RθCAis determined by the user's board design.
a.
78°C/W when mounted on a 1in
2 pad of 2oz copper on FR-4 board.
b.
156°C/W when mounted on a minimum pad.
2. Pulse Test: Pulse Width
≤ 300 µs, Duty Cycle ≤ 2.0%


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