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FDC634P Arkusz danych(PDF) 2 Page - Fairchild Semiconductor

Numer części FDC634P
Szczegółowy opis  P-Channel 2.5V Specified PowerTrench MOSFET
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Producent  FAIRCHILD [Fairchild Semiconductor]
Strona internetowa  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDC634P Arkusz danych(HTML) 2 Page - Fairchild Semiconductor

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FDC634P Rev E(W)
Electrical Characteristics
T
A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
VGS = 0 V, ID = –250
µA
–20
V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = –250
µA, Referenced to 25°C
–12
mV/
°C
IDSS
Zero Gate Voltage Drain Current
VDS = –16 V, VGS = 0 V
–1
µA
IGSSF
Gate–Body Leakage, Forward
VGS = 8 V,
VDS = 0 V
100
nA
IGSSR
Gate–Body Leakage, Reverse
VGS = –8 V
VDS = 0 V
–100
nA
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = –250
µA
–0.4
–0.8
–1.5
V
∆VGS(th)
∆TJ
Gate Threshold Voltage
Temperature Coefficient
ID = –250
µA, Referenced to 25°C
3
mV/
°C
RDS(on)
Static Drain–Source
On–Resistance
VGS = –4.5 V,
ID = –3.5 A
VGS = –2.5 V,
ID = –3.1 A
VGS = –4.5 V, ID = –3.5A,TJ=125
°C
60
82
77
80
110
130
m
ID(on)
On–State Drain Current
VGS = –4.5 V,
VDS = –5 V
–10
A
gFS
Forward Transconductance
VDS = –5 V,
ID = –3.5 A
11
S
Dynamic Characteristics
Ciss
Input Capacitance
779
pF
Coss
Output Capacitance
121
pF
Crss
Reverse Transfer Capacitance
VDS = –10 V,
V GS = 0 V,
f = 1.0 MHz
56
pF
Switching Characteristics
(Note 2)
td(on)
Turn–On Delay Time
10
20
ns
tr
Turn–On Rise Time
9
19
ns
td(off)
Turn–Off Delay Time
27
43
ns
tf
Turn–Off Fall Time
VDD = –10 V,
ID = –1 A,
VGS = –4.5 V,
RGEN = 6
11
20
ns
Qg
Total Gate Charge
7.2
10
nC
Qgs
Gate–Source Charge
1.7
nC
Qgd
Gate–Drain Charge
VDS = –10 V,
ID = –3.5 A,
VGS = –4.5 V
1.5
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
–1.3
A
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V, IS = –1.3 A
(Note 2)
–0.8
–1.2
V
Notes:
1. RθJAis the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJCis guaranteed by design while RθCAis determined by the user's board design.
a)
78°C/W when
mounted on a 1in
2 pad
of 2 oz copper
b)
156°C/W when mounted
on a minimum pad of 2 oz
copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300
µs, Duty Cycle < 2.0%


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