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FDC645N Arkusz danych(PDF) 4 Page - Fairchild Semiconductor |
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FDC645N Arkusz danych(HTML) 4 Page - Fairchild Semiconductor |
4 / 5 page FDC645N Rev C(W) Typical Characteristics 0 2 4 6 8 10 0 5 10 15 20 25 30 Qg, GATE CHARGE (nC) I D = 5.5A V DS = 5V 15 V 10V 0 400 800 1200 1600 2000 2400 0 5 10 15 20 VDS, DRAIN TO SOURCE VOLTAGE (V) C ISS CRSS COSS f = 1MHz V GS = 0 V Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 0.01 0.1 1 10 100 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) DC 10s 1s 100ms 100 µs RDS(ON) LIMIT V GS = 4.5V SINGLE PULSE RθJA = 156 oC/W T A = 25 oC 10ms 1ms 0 1 2 3 4 5 0.1 1 10 100 1000 t1, TIME (sec) SINGLE PULSE RθJA = 156°C/W TA = 25°C Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) RθJA(t) = r(t) + RθJA RθJA = 156°C/W TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 P(pk) t1 t2 SINGLE PULSE 0.01 0.02 0.05 0.1 0.2 D = 0.5 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. |
Podobny numer części - FDC645N_01 |
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Podobny opis - FDC645N_01 |
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