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Zakładka z wyszukiwarką danych komponentów |
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Zakładka z wyszukiwarką danych komponentów |
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IRF7416PBF Arkusz danych(PDF) 1 Page - International Rectifier |
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IRF7416PBF Arkusz danych(HTML) 1 Page - International Rectifier |
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1 / 9 page  Parameter Max. Units ID @ TA = 25°C Continuous Drain Current, VGS @ -10V -10 ID @ TA = 70°C Continuous Drain Current, VGS @ - 10V -7.1 IDM Pulsed Drain Current -45 PD @TA = 25°C Power Dissipation 2.5 Linear Derating Factor 0.02 mW/°C VGS Gate-to-Source Voltage ± 20 V EAS Single Pulse Avalanche Energy 370 mJ dv/dt Peak Diode Recovery dv/dt -5.0 V/ns TJ,TSTG Junction and Storage Temperature Range -55 to + 150 °C IRF7416PbF PD - 95137 HEXFET® Power MOSFET l Generation V Technology l Ultra Low On-Resistance l P-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching l Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application. Absolute Maximum Ratings W A 06/06/05 Thermal Resistance Ratings Parameter Typ. Max. Units RθJA Maximum Junction-to-Ambient
50 °C/W www.irf.com 1 SO-8 Top View 8 1 2 3 4 5 6 7 D D D G S A D S S VDSS = -30V RDS(on) = 0.02Ω |
Podobny numer części - IRF7416PBF |
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Podobny opis - IRF7416PBF |
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