Notes

 through ‡ are on page 11

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1

09/09/05

IRFB38N20DPbF

IRFS38N20DPbF

IRFSL38N20DPbF

SMPS MOSFET

IRFS38N20DPbF

TO-220AB

IRFB38N20DPbF

TO-262

IRFSL38N20DPbF

Benefits

Applications

Switching Losses

App. Note AN1001)

and Current

PROVISIONAL

cycles from -55 to 150°C and is accounted for by the physical wearout of the die attach medium.

Parameter

Max.

Units

38*

27*

A

Pulsed Drain Current



180

Power Dissipation

‡

3.8

W

Power Dissipation

‡

230*

Linear Derating Factor

‡

1.5*

W/°C

Gate-to-Source Voltage

± 30

V

dv/dt

Peak Diode Recovery dv/dt

ƒ

9.5

V/ns

Operating Junction and

-55 to + 175

Storage Temperature Range

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

°C

Mounting torqe, 6-32 or M3 screw

†

10 lbf•in (1.1N•m)

Absolute Maximum Ratings

Thermal Resistance

Parameter

Typ.

Max.

Units

Junction-to-Case

–––

0.47*

Case-to-Sink, Flat, Greased Surface

†

0.50

–––

°C/W

Junction-to-Ambient

†

–––

62

Junction-to-Ambient

‡

–––

40

200

V

260

V

54

m

:

175

°C

Key Parameters

PD - 97001A