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IRFB38N20DPBF Arkusz danych(PDF) 1 Page - International Rectifier |
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IRFB38N20DPBF Arkusz danych(HTML) 1 Page - International Rectifier |
1 / 11 page Notes through are on page 11 www.irf.com 1 09/09/05 IRFB38N20DPbF IRFS38N20DPbF IRFSL38N20DPbF SMPS MOSFET HEXFET® Power MOSFET D2Pak IRFS38N20DPbF TO-220AB IRFB38N20DPbF TO-262 IRFSL38N20DPbF l High frequency DC-DC converters l Plasma Display Panel l Lead-Free Benefits Applications l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current PROVISIONAL * RθJC (end of life) for D2Pak and TO-262 = 0.50°C/W. This is the maximum measured value after 1000 temperature cycles from -55 to 150°C and is accounted for by the physical wearout of the die attach medium. Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 38* ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 27* A IDM Pulsed Drain Current 180 PD @TA = 25°C Power Dissipation 3.8 W PD @TC = 25°C Power Dissipation 230* Linear Derating Factor 1.5* W/°C VGS Gate-to-Source Voltage ± 30 V dv/dt Peak Diode Recovery dv/dt 9.5 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C Mounting torqe, 6-32 or M3 screw 10 lbf•in (1.1N•m) Absolute Maximum Ratings Thermal Resistance Parameter Typ. Max. Units RθJC Junction-to-Case ––– 0.47* RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W RθJA Junction-to-Ambient ––– 62 RθJA Junction-to-Ambient ––– 40 VDS 200 V VDS (Avalanche) min. 260 V RDS(ON) max @ 10V 54 m : TJ max 175 °C Key Parameters PD - 97001A |
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