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FDD3670 Arkusz danych(PDF) 1 Page - Fairchild Semiconductor

Numer części FDD3670
Szczegółowy opis  100V N-Channel PowerTrench MOSFET
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Producent  FAIRCHILD [Fairchild Semiconductor]
Strona internetowa  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDD3670 Arkusz danych(HTML) 1 Page - Fairchild Semiconductor

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June 2001
©2001 Fairchild Semiconductor Corporation
FDD3670 Rev C(W)
FDD3670
100V N-Channel PowerTrench®
® MOSFET
General Description
This
N-Channel
MOSFET
has
been
designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
RDS(ON) specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
Features
• 34 A, 100 V. RDS(ON) = 32 mΩ @ VGS = 10 V
RDS(ON) = 35 m
Ω @ VGS = 6 V
• Low gate charge (57 nC typical)
• Fast switching speed
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability
G
S
D
TO-252
S
D
G
Absolute Maximum Ratings T
A=25
oC unless otherwise noted
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
100
V
VGSS
Gate-Source Voltage
±20
V
ID
Drain Current
– Continuous
(Note 1)
34
A
Drain Current
– Pulsed
100
Maximum Power Dissipation @ TC = 25
°C
(Note 1)
83
@ TA = 25
°C
(Note 1a)
3.8
PD
@ TA = 25
°C
(Note 1b)
1.6
W
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +175
°C
Thermal Characteristics
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
1.8
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1b)
96
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDD3670
FDD3670
13’’
16mm
2500 units


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