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Zakładka z wyszukiwarką danych komponentów |
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Zakładka z wyszukiwarką danych komponentów |
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IRLML6401PBF Arkusz danych(PDF) 1 Page - International Rectifier |
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IRLML6401PBF Arkusz danych(HTML) 1 Page - International Rectifier |
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1 / 8 page  Parameter Typ. Max. Units RθJA Maximum Junction-to-Ambient 75 100 °C/W IRLML6401PbF HEXFET® Power MOSFET Thermal Resistance VDSS = -12V RDS(on) = 0.05Ω l Ultra Low On-Resistance l P-Channel MOSFET l SOT-23 Footprint l Low Profile (<1.1mm) l Available in Tape and Reel l Fast Switching 11/8/04 www.irf.com 1 Parameter Max. Units VDS Drain- Source Voltage -12 V ID @ TA = 25°C Continuous Drain Current, VGS @ -4.5V -4.3 ID @ TA= 70°C Continuous Drain Current, VGS @ -4.5V -3.4 A IDM Pulsed Drain Current -34 PD @TA = 25°C Power Dissipation 1.3 PD @TA = 70°C Power Dissipation 0.8 Linear Derating Factor 0.01 W/°C EAS Single Pulse Avalanche Energy 33 mJ VGS Gate-to-Source Voltage ± 8.0 V TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C Absolute Maximum Ratings W These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management. A thermally enhanced large pad leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint. This package, dubbed the Micro3 ™, is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. The thermal resistance and power dissipation are the best available. Description Micro3 ™ l 1.8V Gate Rated S G 1 2 D 3 PD - 94891A l Lead-Free |
Podobny numer części - IRLML6401PBF |
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Podobny opis - IRLML6401PBF |
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