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FDS4080N3 Arkusz danych(PDF) 1 Page - Fairchild Semiconductor |
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FDS4080N3 Arkusz danych(HTML) 1 Page - Fairchild Semiconductor |
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1 / 7 page  February 2004 2004 Fairchild Semiconductor Corporation FDS4080N3 Rev E1 (W) FDS4080N3 40V N-Channel FLMP PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS(ON) in a small package. Applications • Synchronous rectifier • DC/DC converter Features • 13 A, 40 V RDS(ON) = 10.5 mΩ @ VGS = 10 V • High performance trench technology for extremely low RDS(ON) • High power and current handling capability • Fast switching (Qg = 30 nC ) • FLMP SO-8 package: Enhanced thermal performance in industry-standard package size S D S S SO-8 D D D G NC S S S G D Pin 1 Bottomless SO-8 NC NC NC 4 5 3 6 2 7 1 8 Bottom-side Drain Contact Absolute Maximum Ratings T A=25 oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 40 V VGSS Gate-Source Voltage ± 20 V ID Drain Current – Continuous (Note 1a) 13 A – Pulsed 60 PD Power Dissipation for Single Operation (Note 1a) 3.0 W TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 40 °C/W RθJC Thermal Resistance, Junction-to-Ambient 0.5 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS4080N3 FDS4080N3 13’’ 12mm 2500 units FLMP SO-8 |
Podobny numer części - FDS4080N3_04 |
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Podobny opis - FDS4080N3_04 |
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