FMBS549_06 datasheet(2/5 Pages) FAIRCHILD

Numer części	FMBS549

Szczegółowy opis	PNP Low Saturation Transistor

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Producent	FAIRCHILD [Fairchild Semiconductor]

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FMBS549 Rev. B

Electrical Characteristics* T

C = 25°C unless otherwise noted

* DC Item are tested by Pulse Test: Pulse Width

≤300us, Duty Cycle≤2%

Symbol

Parameter

Conditions

Min.

Max.

Units

Off Characteristics

BVCEO

Collector-Emitter Breakdown Voltage *

IC = -10mA, IB = 0

-30

V

BVCBO

Collector-Base Breakdown Voltage

IC = -100µA, IE = 0

-35

V

BVEBO

Emitter-Base Breakdown Voltage

IE = -100µA, IC = 0

-5.0

V

ICBO

Collector Cutoff Current

VCB = -30V, IE = 0

VCB = -30V, IE = 0, Ta = 100°C

-100

-10

nA

µA

IEBO

Emitter Cutoff Current

VEB= -4.0V, IC=0

-100

nA

On Characteristics *

hFE

DC Current Gain

VCE = -2.0V, IC = -50mA

VCE = -2.0V, IC = -500mA

VCE = -2.0V, IC = -1A

VCE = -2.0V, IC = -2A

VCE = -0.8V, IC = -500mA

70

100

80

40

100

300

VCE (sat)

Collector-Emitter Saturation Voltage

IC = -250mA, IB = -25mA

IC = -500mA, IB = -50mA

IC = -1A, IB = -100mA

IC = -2A, IB = -200mA

-200

-350

-500

-750

mV

VBE (sat)

Base-Emitter Saturation Voltage

IC = -1A, IB = -100mA

-1.25

V

VBE (on)

Base-Emitter On Voltage

IC = -1A, VCE = -2.0V

-1.0

V

Small Signal Characterics

fT

Current Gain Bandwidth Product

IC = -100mA, VCE = -5V,

f = 100MHz

100

MHz

Cob

Output Capacitance

VCB = -10V, IE = 0, f = 1MHz

25

pF

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