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KA5M0965Q Arkusz danych(PDF) 2 Page - Fairchild Semiconductor |
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KA5M0965Q Arkusz danych(HTML) 2 Page - Fairchild Semiconductor |
2 / 12 page KA5M0965Q 2 Absolute Maximum Ratings Note: 1. Tj = 25 °C to 150°C 2. Repetitive rating: Pulse width limited by maximum junction temperature 3. L = 20mH, VDD = 50V, RG = 27 Ω, starting Tj = 25°C Characteristic Symbol Value Unit Drain-Gate Voltage (RGS=1M Ω)VDGR 650 V Gate-Source (GND) Voltage VGS ±30 V Drain Current Pulsed (2) IDM 36.0 ADC Single Pulsed Avalanche Energy (3) EAS 950 mJ Continuous Drain Current (TC=25 °C) ID 9.0 ADC Continuous Drain Current (TC=100 °C) ID 5.8 ADC Maximum Supply Voltage VCC,MAX 30 V Input Voltage Range VFB -0.3 to VSD V Total Power Dissipation PD (watt H/S) 170 W Darting 1.33 W/ °C Operating Ambient Temperature TA -25 to +85 °C Storage Temperature TSTG -55 to +150 °C |
Podobny numer części - KA5M0965Q_03 |
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Podobny opis - KA5M0965Q_03 |
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