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IRF634NPBF Arkusz danych(PDF) 1 Page - International Rectifier

Numer części IRF634NPBF
Szczegółowy opis  HEXFET Power MOSFET
Download  11 Pages
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Producent  IRF [International Rectifier]
Strona internetowa  http://www.irf.com
Logo IRF - International Rectifier

IRF634NPBF Arkusz danych(HTML) 1 Page - International Rectifier

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Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
8.0
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
5.6
A
IDM
Pulsed Drain Current

32
PD @TC = 25°C
Power Dissipation
88
W
PD @TA = 25°C
Power Dissipation
…
3.8
Linear Derating Factor
0.59
W/°C
VGS
Gate-to-Source Voltage
± 20
V
EAS
Single Pulse Avalanche Energy
‚
110
mJ
IAR
Avalanche Current

4.8
A
EAR
Repetitive Avalanche Energy

8.8
mJ
dv/dt
Peak Diode Recovery dv/dt
7.3
V/ns
TJ
Operating Junction and
-55 to +175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
°C
Mounting torque, 6-32 or M3 srew
„
10 lbf•in (1.1N•m)
HEXFET® Power MOSFET
05/28/04
Absolute Maximum Ratings
Description
VDSS = 250V
RDS(on) = 0.435Ω
ID = 8.0A
S
D
G
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Ease of Paralleling
l Simple Drive Requirements
l Lead-Free
D2Pak
IRF634NS
TO-220AB
IRF634N
TO-262
IRF634NL
IRF634NPbF
IRF634NSPbF
IRF634NLPbF
Fifth Generation HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized device
design that HEXFET Power MOSFETs are well known for,
provides the designer with an extremely efficient and reliable
device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-
industrial applications at power dissipation levels to
approximately 50 watts. The low thermal resistance and low
package cost of the TO-220 contribute to its wide acceptance
throughout the industry.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the highest
power capability and the lowest possible on-resistance in any
existing surface mount package. The D2Pak is suitable for high
current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface
mount application.
The through-hole version (IRF634NL) is available for low-
profile application.
www.irf.com
1
PD - 95342


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