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STFV4N150 Arkusz danych(PDF) 1 Page - STMicroelectronics

Numer części STFV4N150
Szczegółowy opis  N-channel 1500V - 5廓 - 4A - TO-220FH Very high voltage PowerMESH??Power MOSFET
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Producent  STMICROELECTRONICS [STMicroelectronics]
Strona internetowa  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STFV4N150 Arkusz danych(HTML) 1 Page - STMicroelectronics

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March 2007
Rev 4
1/13
13
STFV4N150
N-channel 1500V - 5
Ω - 4A - TO-220FH
Very high voltage PowerMESH™ Power MOSFET
General features
Avalanche ruggedness
Gate charge minimized
Very low intrinsic capacitances
High speed switching
Fully plastic TO-220 package
Creepage distance path is > 4mm
Description
Using the well consolidated high voltage MESH
OVERLAY™ process, STMicroelectronics has
designed an advanced family of Power MOSFETs
with outstanding performances. The strengthened
layout coupled with the Company’s proprietary
edge termination structure, gives the lowest
RDS(on) per area, unrivalled gate charge and
switching characteristics. The creepage path is
what makes this package unique from TO-220FP.
The creepage distance path between each lead
and between the leads and the heatsink has been
increased to >4.0mm, making this package met
all stringent safety norms in high voltage
applications.
Applications
Switching application
Internal schematic diagram
Type
VDSS
RDS(on)
ID
Pw
STFV4N150
1500V
<7
4A
40W
1
2
3
TO-220FH
www.st.com
Order codes
Part number
Marking
Package
Packaging
STFV4N150
FV4N150
TO-220FH
Tube


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