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STFV4N150 Arkusz danych(PDF) 1 Page - STMicroelectronics |
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STFV4N150 Arkusz danych(HTML) 1 Page - STMicroelectronics |
1 / 13 page March 2007 Rev 4 1/13 13 STFV4N150 N-channel 1500V - 5 Ω - 4A - TO-220FH Very high voltage PowerMESH™ Power MOSFET General features ■ Avalanche ruggedness ■ Gate charge minimized ■ Very low intrinsic capacitances ■ High speed switching ■ Fully plastic TO-220 package ■ Creepage distance path is > 4mm Description Using the well consolidated high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of Power MOSFETs with outstanding performances. The strengthened layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics. The creepage path is what makes this package unique from TO-220FP. The creepage distance path between each lead and between the leads and the heatsink has been increased to >4.0mm, making this package met all stringent safety norms in high voltage applications. Applications ■ Switching application Internal schematic diagram Type VDSS RDS(on) ID Pw STFV4N150 1500V <7 Ω 4A 40W 1 2 3 TO-220FH www.st.com Order codes Part number Marking Package Packaging STFV4N150 FV4N150 TO-220FH Tube |
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